POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

High-Power NPN Silicon Transistor

High−Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502 • Pb−Free Packag

COMPLEMENTARY HIGH POWER TRANSISTORS

DESCRIPTION The MJ802 (NPN) and MJ4502 (PNP) are silicon epitaxial-base complementary power transistors in Jedec TO-3 metal case, intended for general purpose power amplifier and switching applications.

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to MJ4502

Power Transistors

Power Transistors TO-3 Case (Continued)

isc Silicon NPN Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 25-100@IC= 7.5A • Excellent Safe Operating Area • Complement to Type MJ4502 APPLICATIONS • Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ4502 • Excellent safe operating area APPLICATIONS • For use as an output device in complementary audio amplifiers to 100-Watts music power per channel

High-Power NPN Silicon Transistor

High-Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. Features • High DC Current Gain - hFE = 25-100 IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

30 A，90 V，NPN 双极功率晶体管

This transistor is for use as an output device in complementary audio amplifiers to 100¿Watts music power per channel. • High DC Current Gain - hFE = 25-100 @ IC = 7.5 A\n• Excellent Safe Operating Area\n• Complement to the PNP MJ4502\n• Pb-Free Package is Available;

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 90V 30A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：112.18 Kbytes Page：3 Pages

SILICON NPN POWER TRANSISTOR

文件：42.92 Kbytes Page：4 Pages

High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 90V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.8V(Max) @IC= 7.5A APPLICATIONS · Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.

SILICON NPN POWER TRANSISTOR

文件：42.92 Kbytes Page：4 Pages

High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 90V 30A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat