POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

High-Power NPN Silicon Transistor

High−Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502 • Pb−Free Packag

COMPLEMENTARY HIGH POWER TRANSISTORS

DESCRIPTION The MJ802 (NPN) and MJ4502 (PNP) are silicon epitaxial-base complementary power transistors in Jedec TO-3 metal case, intended for general purpose power amplifier and switching applications.

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to MJ4502

Power Transistors

Power Transistors TO-3 Case (Continued)

isc Silicon NPN Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 25-100@IC= 7.5A • Excellent Safe Operating Area • Complement to Type MJ4502 APPLICATIONS • Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ4502 • Excellent safe operating area APPLICATIONS • For use as an output device in complementary audio amplifiers to 100-Watts music power per channel

High-Power NPN Silicon Transistor

High-Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. Features • High DC Current Gain - hFE = 25-100 IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

Silicon NPN Power Transistors

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SILICON NPN POWER TRANSISTOR

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High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 90V 30A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 A，90 V，NPN 双极功率晶体管

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 90V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.8V(Max) @IC= 7.5A APPLICATIONS · Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.

SILICON NPN POWER TRANSISTOR

文件：42.92 Kbytes Page：4 Pages

High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 90V 30A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 20-35 AMP, STANDARD HIGH EFFICIENCY, ESP SERIES

• Current ratings to 35A • VRRM to 150V • Only fused-in-glass diodes used • 150 °C junction temperature • Surge ratings to 25A • Recovery time: 50nS • Electrically isolated Aluminum case • MIL-PRF-19500 Similarity • Sn/Pb terminations

3/4 STRINGS Xmas LIGHT CONTROL

FEATURES * Adjustable flash rate. * Programmable 2/3/4 strings of bulbs. * UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. * UTC 802 sequential mode only. APPLICATION * Xmas light controller, any

INTERCONNECTS .100??Grid (.030??dia.) Pins, Straight and Right Angle Double Row

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Panel Mount for 5x20 mm und 6.3x32 mm Fuses

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M8 Plastic Passive I/O Box

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