High-Power NPN Silicon Transistor

High−Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502 • Pb−Free Packag

Power Transistors

Power Transistors TO-3 Case (Continued)

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

isc Silicon NPN Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 25-100@IC= 7.5A • Excellent Safe Operating Area • Complement to Type MJ4502 APPLICATIONS • Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.

High-Power NPN Silicon Transistor

High-Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. Features • High DC Current Gain - hFE = 25-100 IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ4502 • Excellent safe operating area APPLICATIONS • For use as an output device in complementary audio amplifiers to 100-Watts music power per channel

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to MJ4502

COMPLEMENTARY HIGH POWER TRANSISTORS

DESCRIPTION The MJ802 (NPN) and MJ4502 (PNP) are silicon epitaxial-base complementary power transistors in Jedec TO-3 metal case, intended for general purpose power amplifier and switching applications.

30 A，90 V，NPN 双极功率晶体管

This transistor is for use as an output device in complementary audio amplifiers to 100¿Watts music power per channel. • High DC Current Gain - hFE = 25-100 @ IC = 7.5 A\n• Excellent Safe Operating Area\n• Complement to the PNP MJ4502\n• Pb-Free Package is Available;

SILICON NPN POWER TRANSISTOR

文件：42.92 Kbytes Page：4 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 90V 30A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：112.18 Kbytes Page：3 Pages

High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 90V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):0.8V(Max) @IC= 7.5A APPLICATIONS · Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.

SILICON NPN POWER TRANSISTOR

文件：42.92 Kbytes Page：4 Pages

High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

High?뭁ower NPN Silicon Transistor

文件：76.07 Kbytes Page：4 Pages

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 90V 30A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat