POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V • DC Current Gain— : hFE = 750(Min) @ IC= 2A • Complement to Type MJE702T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-220 Box

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington Central Semiconductor

RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 20-35 AMP, STANDARD HIGH EFFICIENCY, ESP SERIES

• Current ratings to 35A • VRRM to 150V • Only fused-in-glass diodes used • 150 °C junction temperature • Surge ratings to 25A • Recovery time: 50nS • Electrically isolated Aluminum case • MIL-PRF-19500 Similarity • Sn/Pb terminations

3/4 STRINGS Xmas LIGHT CONTROL

FEATURES * Adjustable flash rate. * Programmable 2/3/4 strings of bulbs. * UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. * UTC 802 sequential mode only. APPLICATION * Xmas light controller, any

INTERCONNECTS .100??Grid (.030??dia.) Pins, Straight and Right Angle Double Row

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Panel Mount for 5x20 mm und 6.3x32 mm Fuses

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M8 Plastic Passive I/O Box

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