MJE802晶体管资料

  • MJE802别名:MJE802三极管、MJE802晶体管、MJE802晶体三极管

  • MJE802生产厂家:美国摩托罗拉半导体公司

  • MJE802制作材料:Si-N+Darl+Di

  • MJE802性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • MJE802封装形式:直插封装

  • MJE802极限工作电压:80V

  • MJE802最大电流允许值:4A

  • MJE802最大工作频率:<1MHZ或未知

  • MJE802引脚数:3

  • MJE802最大耗散功率:40W

  • MJE802放大倍数:β>750

  • MJE802图片代号:B-21

  • MJE802vtest:80

  • MJE802htest:999900

  • MJE802atest:4

  • MJE802wtest:40

  • MJE802代换 MJE802用什么型号代替:BD263A,BD679,BD779,FD50B,2N6039,

MJE802价格

参考价格:¥2.6116

型号:MJE802 品牌:STMicroelectronics 备注:这里有MJE802多少钱,2025年最近7天走势,今日出价,今日竞价,MJE802批发/采购报价,MJE802行情走势销售排行榜,MJE802报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE802

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJE802

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE802

SILICONNPNPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJE802

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ​​​​​​​ •HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC •ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJE802

SILICONNPNPOWERDARLINGTONTRANSISTOR

■STMicroelectronicsPREFERRED SALESTYPE ■NPNDARLINGTON APPLICATIONS ■GENERALPURPOSESWITCHING DESCRIPTION TheMJE802isasiliconEpitaxial-BaseNPN transistorinmonolithicDarlingtonconfiguration, mountedinJedecSOT-32plasticpackage.Itis intendedforuseinmediumpower

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJE802

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
MJE802

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE802

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE802

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美国中央半导体

Central
MJE802

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE802

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 80V 4A SOT32 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJE802

SiliconNPNPowerTransistors

文件:104.62 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
MJE802

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

文件:84.77 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SILICONNPNPOWERDARLINGTONTRANSISTOR

■STMicroelectronicsPREFERRED SALESTYPE ■NPNDARLINGTON APPLICATIONS ■GENERALPURPOSESWITCHING DESCRIPTION TheMJE802isasiliconEpitaxial-BaseNPN transistorinmonolithicDarlingtonconfiguration, mountedinJedecSOT-32plasticpackage.Itis intendedforuseinmediumpower

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MOSPEC

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •Collector–EmitterBreakdownVoltage— :V(BR)CEO=80V •DCCurrentGain— :hFE=750(Min)@IC=2A •ComplementtoTypeMJE702T APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speed switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

文件:84.77 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEpitaxialSiliconDarlingtonTransistor

文件:214.21 Kbytes Page:1 Pages

TGS

Tiger Electronic Co.,Ltd

TGS

封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS NPN DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

3/4STRINGSXmasLIGHTCONTROL

FEATURES *Adjustableflashrate. *Programmable2/3/4stringsofbulbs. *UTC801sequentialmodeforabout57sec.4light stringflashforabout3sec.accordingtonormalfosc. thenbacktosequentialagain. *UTC802sequentialmodeonly. APPLICATION *Xmaslightcontroller,any

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

RECTIFIERSASSEMBLIESSINGLEPHASEBRIDGES,20-35AMP,STANDARDHIGHEFFICIENCY,ESPSERIES

•Currentratingsto35A •VRRMto150V •Onlyfused-in-glassdiodesused •150°Cjunctiontemperature •Surgeratingsto25A •Recoverytime:50nS •ElectricallyisolatedAluminumcase •MIL-PRF-19500Similarity •Sn/Pbterminations

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

M8PlasticPassiveI/OBox

文件:165.5 Kbytes Page:2 Pages

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

INTERCONNECTS.100??Grid(.030??dia.)Pins,StraightandRightAngleDoubleRow

文件:300.59 Kbytes Page:1 Pages

MILL-MAX

Mill-Max Manufacturing Corp.

MILL-MAX

PanelMountfor5x20mmund6.3x32mmFuses

文件:178.31 Kbytes Page:1 Pages

Littelfuselittelfuse

力特力特公司

Littelfuse

MJE802产品属性

  • 类型

    描述

  • 型号

    MJE802

  • 功能描述

    达林顿晶体管 NPN Power Darlington

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-7-31 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
22+
TO126
100000
代理渠道/只做原装/可含税
ON/安森美
24+
NA/
120
优势代理渠道,原装正品,可全系列订货开增值税票
ST/意法
25+
TO-225AATO-126
54558
百分百原装现货 实单必成 欢迎询价
M
24+
TO 126
157360
明嘉莱只做原装正品现货
ST/ON
1738+
TO-126
8529
科恒伟业!只做原装正品,假一赔十!
ON(安森美)
23+
TO-225
11753
公司只做原装正品,假一赔十
96+
TO-126
38
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法
21+
TO-225AATO-126
6796
优势供应 实单必成 可13点增值税
ST
24+
TO-126
25000
ST专营品牌全新原装热卖
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

MJE802芯片相关品牌

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