Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base Emitter Resistors ​​​​​​​ • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

SILICON NPN POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES

SILICON NPN POWER DARLINGTON TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package. It is intended for use in medium power

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN DARL 80V 4A SOT32 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON NPN POWER DARLINGTON TRANSISTORS

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-126

Silicon NPN Power Transistors

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

SILICON NPN POWER DARLINGTON TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package. It is intended for use in medium power

Plastic Darlington Complementary Silicon Power Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V • DC Current Gain— : hFE = 750(Min) @ IC= 2A • Complement to Type MJE702T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

NPN Epitaxial Silicon Darlington Transistor

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

3/4 STRINGS Xmas LIGHT CONTROL

FEATURES * Adjustable flash rate. * Programmable 2/3/4 strings of bulbs. * UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. * UTC 802 sequential mode only. APPLICATION * Xmas light controller, any

RECTIFIERS ASSEMBLIES SINGLE PHASE BRIDGES, 20-35 AMP, STANDARD HIGH EFFICIENCY, ESP SERIES

• Current ratings to 35A • VRRM to 150V • Only fused-in-glass diodes used • 150 °C junction temperature • Surge ratings to 25A • Recovery time: 50nS • Electrically isolated Aluminum case • MIL-PRF-19500 Similarity • Sn/Pb terminations

Panel Mount for 5x20 mm und 6.3x32 mm Fuses

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INTERCONNECTS .100??Grid (.030??dia.) Pins, Straight and Right Angle Double Row

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M8 Plastic Passive I/O Box

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