4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

DARLINGTON POWER TRANSISTORS COMPLEMENTARY

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

SILICON NPN POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJE802 and MJE803 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec SOT-32 plastic package.They are intended for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES

Monolithic Construction With Built-in Base- Emitter Resistors

Monolithic Construction With Built-in Base Emitter Resistors ​​​​​​​ • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to MJE700/701/702/703

SILICON NPN POWER DARLINGTON TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package. It is intended for use in medium power

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE700/701/702/703 • High DC current gain • DARLINGTON APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700, MJE800 series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices.

Plastic Darlington Complementary Silicon Power Transistors

... designed for general-purpose amplifier and low-speed switching applications. • High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN DARL 80V 4A SOT32 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON NPN POWER DARLINGTON TRANSISTORS

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Trans Darlington NPN 80V 4A 3-Pin(3+Tab) TO-126

Silicon NPN Power Transistors

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4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

SILICON NPN POWER DARLINGTON TRANSISTOR

■ STMicroelectronics PREFERRED SALESTYPE ■ NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, mounted in Jedec SOT-32 plastic package. It is intended for use in medium power

Plastic Darlington Complementary Silicon Power Transistors

These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V • DC Current Gain— : hFE = 750(Min) @ IC= 2A • Complement to Type MJE702T APPLICATIONS • Designed for general-purpose amplifier and low-speed switching applications

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

文件：84.77 Kbytes Page：6 Pages

NPN Epitaxial Silicon Darlington Transistor

文件：214.21 Kbytes Page：1 Pages

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS