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MJE802晶体管资料
MJE802别名:MJE802三极管、MJE802晶体管、MJE802晶体三极管
MJE802生产厂家:美国摩托罗拉半导体公司
MJE802制作材料:Si-N+Darl+Di
MJE802性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
MJE802封装形式:直插封装
MJE802极限工作电压:80V
MJE802最大电流允许值:4A
MJE802最大工作频率:<1MHZ或未知
MJE802引脚数:3
MJE802最大耗散功率:40W
MJE802放大倍数:β>750
MJE802图片代号:B-21
MJE802vtest:80
MJE802htest:999900
- MJE802atest:4
MJE802wtest:40
MJE802代换 MJE802用什么型号代替:BD263A,BD679,BD779,FD50B,2N6039,
MJE802价格
参考价格:¥2.6116
型号:MJE802 品牌:STMicroelectronics 备注:这里有MJE802多少钱,2025年最近7天走势,今日出价,今日竞价,MJE802批发/采购报价,MJE802行情走势销售排行榜,MJE802报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MJE802 | 4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | ||
MJE802 | DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJE802 | SILICONNPNPOWERDARLINGTONTRANSISTORS DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
MJE802 | MonolithicConstructionWithBuilt-inBase-EmitterResistors MonolithicConstructionWithBuilt-inBaseEmitterResistors •HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC •ComplementtoMJE700/701/702/703 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MJE802 | SILICONNPNPOWERDARLINGTONTRANSISTOR ■STMicroelectronicsPREFERRED SALESTYPE ■NPNDARLINGTON APPLICATIONS ■GENERALPURPOSESWITCHING DESCRIPTION TheMJE802isasiliconEpitaxial-BaseNPN transistorinmonolithicDarlingtonconfiguration, mountedinJedecSOT-32plasticpackage.Itis intendedforuseinmediumpower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
MJE802 | SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications | SAVANTIC Savantic, Inc. | ||
MJE802 | iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJE802 | SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJE802 | COMPLEMENTARYPOWERDARLINGTONTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices. | CentralCentral Semiconductor Corp 美国中央半导体 | ||
MJE802 | PlasticDarlingtonComplementarySiliconPowerTransistors ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
MJE802 | 封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN DARL 80V 4A SOT32 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | ||
MJE802 | SiliconNPNPowerTransistors 文件:104.62 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | ||
MJE802 | 4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT 文件:84.77 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
SILICONNPNPOWERDARLINGTONTRANSISTOR ■STMicroelectronicsPREFERRED SALESTYPE ■NPNDARLINGTON APPLICATIONS ■GENERALPURPOSESWITCHING DESCRIPTION TheMJE802isasiliconEpitaxial-BaseNPN transistorinmonolithicDarlingtonconfiguration, mountedinJedecSOT-32plasticpackage.Itis intendedforuseinmediumpower | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | |||
PlasticDarlingtonComplementarySiliconPowerTransistors Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTORS(4.0A,60-80V,40W) PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | |||
iscSiliconNPNDarlingtonPowerTransistor DESCRIPTION •Collector–EmitterBreakdownVoltage— :V(BR)CEO=80V •DCCurrentGain— :hFE=750(Min)@IC=2A •ComplementtoTypeMJE702T APPLICATIONS •Designedforgeneral-purposeamplifierandlow-speed switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT 文件:84.77 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNEpitaxialSiliconDarlingtonTransistor 文件:214.21 Kbytes Page:1 Pages | TGS Tiger Electronic Co.,Ltd | |||
封装/外壳:TO-225AA,TO-126-3 包装:管件 描述:TRANS NPN DARL 80V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
3/4STRINGSXmasLIGHTCONTROL FEATURES *Adjustableflashrate. *Programmable2/3/4stringsofbulbs. *UTC801sequentialmodeforabout57sec.4light stringflashforabout3sec.accordingtonormalfosc. thenbacktosequentialagain. *UTC802sequentialmodeonly. APPLICATION *Xmaslightcontroller,any | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
RECTIFIERSASSEMBLIESSINGLEPHASEBRIDGES,20-35AMP,STANDARDHIGHEFFICIENCY,ESPSERIES •Currentratingsto35A •VRRMto150V •Onlyfused-in-glassdiodesused •150°Cjunctiontemperature •Surgeratingsto25A •Recoverytime:50nS •ElectricallyisolatedAluminumcase •MIL-PRF-19500Similarity •Sn/Pbterminations | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
M8PlasticPassiveI/OBox 文件:165.5 Kbytes Page:2 Pages | ALPHAWIREAlpha Wire 阿尔法电线 | |||
INTERCONNECTS.100??Grid(.030??dia.)Pins,StraightandRightAngleDoubleRow 文件:300.59 Kbytes Page:1 Pages | MILL-MAX Mill-Max Manufacturing Corp. | |||
PanelMountfor5x20mmund6.3x32mmFuses 文件:178.31 Kbytes Page:1 Pages | Littelfuselittelfuse 力特力特公司 |
MJE802产品属性
- 类型
描述
- 型号
MJE802
- 功能描述
达林顿晶体管 NPN Power Darlington
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
ON/安森美 |
24+ |
NA/ |
120 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
25+ |
TO-225AATO-126 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
M |
24+ |
TO 126 |
157360 |
明嘉莱只做原装正品现货 |
|||
ST/ON |
1738+ |
TO-126 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ON(安森美) |
23+ |
TO-225 |
11753 |
公司只做原装正品,假一赔十 |
|||
96+ |
TO-126 |
38 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
ST/意法 |
21+ |
TO-225AATO-126 |
6796 |
优势供应 实单必成 可13点增值税 |
|||
ST |
24+ |
TO-126 |
25000 |
ST专营品牌全新原装热卖 |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
MJE802规格书下载地址
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