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TIP14晶体管资料
TIP14别名:TIP14三极管、TIP14晶体管、TIP14晶体三极管
TIP14生产厂家:美国得克萨斯仪表公司
TIP14制作材料:Si-NPN
TIP14性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
TIP14封装形式:直插封装
TIP14极限工作电压:80V
TIP14最大电流允许值:4A
TIP14最大工作频率:<1MHZ或未知
TIP14引脚数:3
TIP14最大耗散功率:10W
TIP14放大倍数:
TIP14图片代号:B-95
TIP14vtest:80
TIP14htest:999900
- TIP14atest:4
TIP14wtest:10
TIP14代换 TIP14用什么型号代替:BD243B,BD589,BD599,3DK12C,
TIP14价格
参考价格:¥5.5229
型号:TIP140G 品牌:ONSemi 备注:这里有TIP14多少钱,2024年最近7天走势,今日出价,今日竞价,TIP14批发/采购报价,TIP14行情走势销售排行榜,TIP14报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
POWER TRANSISTORS(10A,60-100V,125W)
| MOSPEC MOSPEC | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN SILICON POWER DARLINGTONS ●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A | POINNPower Innovations Ltd Power Innovations Ltd | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140, | MotorolaMotorola, Inc 摩托罗拉 | |||
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147 | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Silicon NPN Darlington Power Transistors DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. | SAVANTIC Savantic, Inc. | |||
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching | CentralCentral Semiconductor Corp 美国中央半导体 | |||
POWER DARLINGTONS DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SILICON PLANAR DARLINGTON POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL CDIL | |||
NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14 | COMSET Comset Semiconductor | |||
Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
TO-3P Fully Isolated Plastic Package Transistor CDIL TO-3PFullyIsolatedPlasticPackageTransistorCDIL | CDIL CDIL | |||
SILICON PLANAR DARLINGTON POWER TRANSISTORS SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications | TEL TRANSYS Electronics Limited | |||
SILICON PLANAR DARLINGTON POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL CDIL | |||
POWER TRANSISTORS(10A,60-100V,80W) DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP | MOSPEC MOSPEC | |||
Monolithic Construction With Built In Base-Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147 | SEMIHOW SemiHow Co.,Ltd. | |||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min) •ComplementtoTypeTIP145T APPLICATIONS •Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPN Epitaxial Silicon Darlington Transistor Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
POWER TRANSISTORS(10A,60-100V,125W)
| MOSPEC MOSPEC | |||
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140, | MotorolaMotorola, Inc 摩托罗拉 | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPN SILICON POWER DARLINGTONS ●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A | POINNPower Innovations Ltd Power Innovations Ltd | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Silicon NPN Darlington Power Transistors DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. | SAVANTIC Savantic, Inc. | |||
isc Silicon NPN Darlington Power Transistor DESCRIPTION •HighDCCurrentGain- :hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=80V(Min) •ComplementtoTypeTIP146 APPLICATIONS •Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching | CentralCentral Semiconductor Corp 美国中央半导体 | |||
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147 | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
POWER DARLINGTONS DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SILICON PLANAR DARLINGTON POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL CDIL | |||
NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14 | COMSET Comset Semiconductor | |||
Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
TO-3P Fully Isolated Plastic Package Transistor CDIL TO-3PFullyIsolatedPlasticPackageTransistorCDIL | CDIL CDIL | |||
SILICON PLANAR DARLINGTON POWER TRANSISTORS SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications | TEL TRANSYS Electronics Limited | |||
SILICON PLANAR DARLINGTON POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL CDIL | |||
POWER TRANSISTORS(10A,60-100V,80W) DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP | MOSPEC MOSPEC | |||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Monolithic Construction With Built In Base-Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147 | SEMIHOW SemiHow Co.,Ltd. | |||
NPN Epitaxial Silicon Darlington Transistor Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Silicon NPN Darlington Power Transistor Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
POWER TRANSISTORS(10A,60-100V,125W)
| MOSPEC MOSPEC | |||
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140, | MotorolaMotorola, Inc 摩托罗拉 | |||
NPN SILICON POWER DARLINGTONS ●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A | POINNPower Innovations Ltd Power Innovations Ltd | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147 | WINGSWing Shing Computer Components Wing Shing Computer Components | |||
Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Silicon NPN Darlington Power Transistors DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. | SAVANTIC Savantic, Inc. | |||
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching | CentralCentral Semiconductor Corp 美国中央半导体 | |||
Complementary power Darlington transistors DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SILICON PLANAR DARLINGTON POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage | CDIL CDIL | |||
NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14 | COMSET Comset Semiconductor | |||
POWER DARLINGTONS DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
TO-247 Plastic-Encapsulate Transistors Features ■MonolithicDarlingtonconfiguration ■Integratedantiparallelcollector-emitterdiode Applications ■Linearandswitchingindustrialequipment | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
Monolithic Construction With Built In Base- Emitter Shunt Resistors MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
TO-3P Fully Isolated Plastic Package Transistor CDIL TO-3PFullyIsolatedPlasticPackageTransistorCDIL | CDIL CDIL | |||
SILICON PLANAR DARLINGTON POWER TRANSISTORS SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications | TEL TRANSYS Electronics Limited |
TIP14产品属性
- 类型
描述
- 型号
TIP14
- 功能描述
达林顿晶体管 RO 511-TIP141
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-218 |
50000 |
全新原装正品现货,支持订货 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
23+ |
N/A |
30650 |
正品授权货源可靠 |
||||
ST意法半导体 |
22+21+ |
TO-218 |
3000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
ST |
22+ |
TO-220 |
10000 |
正规渠道,只有原装! |
|||
FSC |
TO-247 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST/KA/ON |
TO- |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
FAIRC |
2023+ |
TO-3P |
16800 |
芯为只有原装,公司现货 |
|||
PH |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
TIP14规格书下载地址
TIP14参数引脚图相关
- uc3842
- u600
- u300
- u202
- u1205
- t触发器
- type-c
- tx20
- ttl电平
- ttl电路
- tsmc
- tsl2561
- tsl230
- tr100
- tps61200
- tmds
- tm7705
- tl7705
- tl494
- tl431
- TIP146T
- TIP146G
- TIP146FI
- TIP146F
- TIP146
- TIP145T
- TIP145G
- TIP145FI
- TIP145F
- TIP145
- TIP142T
- TIP142G
- TIP142FI
- TIP142F
- TIP-142
- TIP142
- TIP141T
- TIP141G
- TIP141FI
- TIP141F
- TIP141
- TIP140T
- TIP140G
- TIP140FI
- TIP140F
- TIP140
- TIP137G
- TIP137
- TIP136
- TIP135
- TIP132G
- TIP132
- TIP131G
- TIP131
- TIP130
- TIP127L
- TIP127G
- TIP127F
- TIP127D
- TIP127A
- TIP127
- TIP126G
- TIP126F
- TIP126
- TIP125G
- TIP125F
- TIP125
- TIP122
- TIP121
- TIP120
- TIP117
- TIP116
- TIP115
- TIP112
- TIP111
- TIP110
- TIP107A
- TIP107
TIP14数据表相关新闻
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DdatasheetPDF页码索引
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