TIP14晶体管资料

  • TIP14别名:TIP14三极管、TIP14晶体管、TIP14晶体三极管

  • TIP14生产厂家:美国得克萨斯仪表公司

  • TIP14制作材料:Si-NPN

  • TIP14性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • TIP14封装形式:直插封装

  • TIP14极限工作电压:80V

  • TIP14最大电流允许值:4A

  • TIP14最大工作频率:<1MHZ或未知

  • TIP14引脚数:3

  • TIP14最大耗散功率:10W

  • TIP14放大倍数

  • TIP14图片代号:B-95

  • TIP14vtest:80

  • TIP14htest:999900

  • TIP14atest:4

  • TIP14wtest:10

  • TIP14代换 TIP14用什么型号代替:BD243B,BD589,BD599,3DK12C,

TIP14价格

参考价格:¥5.5229

型号:TIP140G 品牌:ONSemi 备注:这里有TIP14多少钱,2024年最近7天走势,今日出价,今日竞价,TIP14批发/采购报价,TIP14行情走势销售排行榜,TIP14报价。
型号 功能描述 生产厂家&企业 LOGO 操作

POWER TRANSISTORS(10A,60-100V,125W)

MOSPEC

MOSPEC

MOSPEC

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

MotorolaMotorola, Inc

摩托罗拉

Motorola

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN)

HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Silicon NPN Darlington Power Transistors

DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching

CentralCentral Semiconductor Corp

美国中央半导体

Central

POWER DARLINGTONS

DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SILICON PLANAR DARLINGTON POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14

COMSET

Comset Semiconductor

COMSET

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

CDIL

CDIL

CDIL

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

SILICON PLANAR DARLINGTON POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP

MOSPEC

MOSPEC

MOSPEC

Monolithic Construction With Built In Base-Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=60V(Min) •ComplementtoTypeTIP145T APPLICATIONS •Designedforgeneralpurposeamplifierandlowspeedswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPN Epitaxial Silicon Darlington Transistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWER TRANSISTORS(10A,60-100V,125W)

MOSPEC

MOSPEC

MOSPEC

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

MotorolaMotorola, Inc

摩托罗拉

Motorola

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Silicon NPN Darlington Power Transistors

DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain- :hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=80V(Min) •ComplementtoTypeTIP146 APPLICATIONS •Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching

CentralCentral Semiconductor Corp

美国中央半导体

Central

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN)

HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

POWER DARLINGTONS

DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SILICON PLANAR DARLINGTON POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14

COMSET

Comset Semiconductor

COMSET

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

CDIL

CDIL

CDIL

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

SILICON PLANAR DARLINGTON POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP

MOSPEC

MOSPEC

MOSPEC

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Monolithic Construction With Built In Base-Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

NPN Epitaxial Silicon Darlington Transistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

Silicon NPN Darlington Power Transistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWER TRANSISTORS(10A,60-100V,125W)

MOSPEC

MOSPEC

MOSPEC

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

MotorolaMotorola, Inc

摩托罗拉

Motorola

NPN SILICON POWER DARLINGTONS

●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN)

HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

Silicon NPN Darlington Power Transistors

DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching

CentralCentral Semiconductor Corp

美国中央半导体

Central

Complementary power Darlington transistors

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SILICON PLANAR DARLINGTON POWER TRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14

COMSET

Comset Semiconductor

COMSET

POWER DARLINGTONS

DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TO-247 Plastic-Encapsulate Transistors

Features ■MonolithicDarlingtonconfiguration ■Integratedantiparallelcollector-emitterdiode Applications ■Linearandswitchingindustrialequipment

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

Monolithic Construction With Built In Base- Emitter Shunt Resistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

CDIL

CDIL

CDIL

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

TIP14产品属性

  • 类型

    描述

  • 型号

    TIP14

  • 功能描述

    达林顿晶体管 RO 511-TIP141

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-4-25 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
TO-218
50000
全新原装正品现货,支持订货
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
23+
N/A
30650
正品授权货源可靠
ST意法半导体
22+21+
TO-218
3000
16年电子元件现货供应商 终端BOM表可配单提供样品
ST
22+
TO-220
10000
正规渠道,只有原装!
FSC
TO-247
68500
一级代理 原装正品假一罚十价格优势长期供货
ST/KA/ON
TO-
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
FAIRC
2023+
TO-3P
16800
芯为只有原装,公司现货
PH
2020+
TO-3P
16800
绝对原装进口现货,假一赔十,价格优势!?

TIP14芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

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