TIP14晶体管资料
TIP14别名：TIP14三极管、TIP14晶体管、TIP14晶体三极管
TIP14生产厂家：美国得克萨斯仪表公司
TIP14制作材料：Si-NPN
TIP14性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
TIP14封装形式：直插封装
TIP14极限工作电压：80V
TIP14最大电流允许值：4A
TIP14最大工作频率：<1MHZ或未知
TIP14引脚数：3
TIP14最大耗散功率：10W
TIP14放大倍数：
TIP14图片代号：B-95
TIP14vtest：80
TIP14htest：999900
- TIP14atest：4
TIP14wtest：10
TIP14代换 TIP14用什么型号代替：BD243B,BD589,BD599,3DK12C,
TIP14价格
参考价格：￥5.5229
型号：TIP140G 品牌：ONSemi 备注：这里有TIP14多少钱，2026年最近7天走势，今日出价，今日竞价，TIP14批发/采购报价，TIP14行情走势销售排行榜，TIP14报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：TIP147；TO-247 Plastic-Encapsulate Transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment | DGNJDZ 南晶电子 |   | ||
Silicon NPN Darlington Power Transistors DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain • Complement to type TIP145/146/147 APPLICATIONS • Designed for general–purpose amplifier and low frequency switching applications. | SAVANTIC | | ||
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) HIGH DC CURRENT GAIN • Complementary to TIP145/146/147 | WINGS 永盛电子 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI | STMICROELECTRONICS 意法半导体 | | ||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147 | FAIRCHILD 仙童半导体 | | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA | ONSEMI 安森美半导体 | | ||
SILICON PLANAR DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package | CDIL | | ||
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching | CENTRAL | | ||
POWER TRANSISTORS(10A,60-100V,125W)
| MOSPEC 统懋 | | ||
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, | MOTOROLA 摩托罗拉 | | ||
NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in TO-3PN plastic packtage. They are intended for use in power linear and switching application. The complementary are TIP145, TIP146, TIP14 | COMSET | | ||
POWER DARLINGTONS DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN | | ||
TO-3P Fully Isolated Plastic Package Transistor CDIL TO-3P Fully Isolated Plastic Package Transistor CDIL | CDIL | | ||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use | FAIRCHILD 仙童半导体 | | ||
SILICON PLANAR DARLINGTON POWER TRANSISTORS SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications | TEL | | ||
SILICON PLANAR DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package | CDIL | | ||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T | FAIRCHILD 仙童半导体 | | ||
NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) • Complement to Type TIP145T APPLICATIONS • Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
POWER TRANSISTORS(10A,60-100V,80W) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP | MOSPEC 统懋 | | ||
Monolithic Construction With Built In Base-Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147 | SEMIHOW | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN | | ||
Silicon NPN Darlington Power Transistors DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain • Complement to type TIP145/146/147 APPLICATIONS • Designed for general–purpose amplifier and low frequency switching applications. | SAVANTIC | | ||
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) HIGH DC CURRENT GAIN • Complementary to TIP145/146/147 | WINGS 永盛电子 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI | STMICROELECTRONICS 意法半导体 | | ||
POWER TRANSISTORS(10A,60-100V,125W)
| MOSPEC 统懋 | | ||
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching | CENTRAL | | ||
Darlington Transistors Features • Designed for general-purpose amplifier and low speed switching applications • Collector-Emitter sustaining voltage VCEO (sus) = 60V (Minimum) - TIP145 = 80V (Minimum) - TIP141, TIP146 = 100V (Minimum) - TIP142, TIP147 • Collector-Emitter saturation voltage VCE (sat) = 2V (Maximum | MULTICOMP 易络盟 | | ||
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, | MOTOROLA 摩托罗拉 | | ||
NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in TO-3PN plastic packtage. They are intended for use in power linear and switching application. The complementary are TIP145, TIP146, TIP14 | COMSET | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) • Complement to Type TIP146 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications. | ISC 无锡固电 | | ||
POWER DARLINGTONS DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147 | FAIRCHILD 仙童半导体 | | ||
SILICON PLANAR DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package | CDIL | | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA | ONSEMI 安森美半导体 | | ||
TO-3P Fully Isolated Plastic Package Transistor CDIL TO-3P Fully Isolated Plastic Package Transistor CDIL | CDIL | | ||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use | FAIRCHILD 仙童半导体 | | ||
SILICON PLANAR DARLINGTON POWER TRANSISTORS SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications | TEL | | ||
SILICON PLANAR DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package | CDIL | | ||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T | FAIRCHILD 仙童半导体 | | ||
NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Darlington Power Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
POWER TRANSISTORS(10A,60-100V,80W) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP | MOSPEC 统懋 | | ||
Monolithic Construction With Built In Base-Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147 | SEMIHOW | | ||
Silicon NPN Darlington Power Transistors DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain • Complement to type TIP145/146/147 APPLICATIONS • Designed for general–purpose amplifier and low frequency switching applications. | SAVANTIC | | ||
NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A | POINN | | ||
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN) HIGH DC CURRENT GAIN • Complementary to TIP145/146/147 | WINGS 永盛电子 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI | STMICROELECTRONICS 意法半导体 | | ||
Complementary power Darlington transistors DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI | STMICROELECTRONICS 意法半导体 | | ||
TO-247 Plastic-Encapsulate Transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment | DGNJDZ 南晶电子 | | ||
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, | MOTOROLA 摩托罗拉 | | ||
Darlington Transistors Features • Designed for general-purpose amplifier and low speed switching applications • Collector-Emitter sustaining voltage VCEO (sus) = 60V (Minimum) - TIP145 = 80V (Minimum) - TIP141, TIP146 = 100V (Minimum) - TIP142, TIP147 • Collector-Emitter saturation voltage VCE (sat) = 2V (Maximum | MULTICOMP 易络盟 | | ||
NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in TO-3PN plastic packtage. They are intended for use in power linear and switching application. The complementary are TIP145, TIP146, TIP14 | COMSET | | ||
POWER TRANSISTORS(10A,60-100V,125W)
| MOSPEC 统懋 | | ||
SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching | CENTRAL | | ||
POWER DARLINGTONS DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Monolithic Construction With Built In Base- Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147 | FAIRCHILD 仙童半导体 | | ||
SILICON PLANAR DARLINGTON POWER TRANSISTORS Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package | CDIL | | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA | ONSEMI 安森美半导体 | |
TIP14产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Polarity：
NPN
- IC Continuous (A)：
10
- V(BR)CEO Min (V)：
60
- VCE(sat) Max (V)：
2
- hFE Min (k)：
0.5
- fT Min (MHz)：
4
- Package Type：
SOT-93-3/TO-218-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-3P-3L |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法 |
25+ |
TO-247 |
32000 |
ST/意法全新特价TIP147即刻询购立享优惠#长期有货 |
|||
FAIRCHILD |
23+ |
TO-220 |
65400 |
||||
FSC |
23+ |
TO-220 |
6800 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ST |
25+ |
TO-247 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
22+ |
T0220-3 |
34365 |
原装正品，实单请联系 |
|||
ST(意法) |
25+ |
N/A |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ON(安森美) |
23+ |
10081 |
公司只做原装正品,假一赔十 |
||||
ONSEMI/安森美 |
2025+ |
2500 |
原装进口价格优 请找坤融电子! |
||||
ON |
25+ |
TO-247 |
4800 |
原装正品!!!优势库存!0755-83210901 |
TIP14规格书下载地址
TIP14参数引脚图相关
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- TIP146G
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- TIP146F
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- TIP145T
- TIP145G
- TIP145FI
- TIP145F
- TIP145
- TIP142T
- TIP142G
- TIP142FI
- TIP142F
- TIP-142
- TIP142
- TIP141T
- TIP141G
- TIP141FI
- TIP141F
- TIP141
- TIP140T
- TIP140G
- TIP140FI
- TIP140F
- TIP140
- TIP137G
- TIP137
- TIP136
- TIP135
- TIP132G
- TIP132
- TIP131G
- TIP131
- TIP130
- TIP127L
- TIP127G
- TIP127F
- TIP127D
- TIP127A
- TIP127
- TIP126G
- TIP126F
- TIP126
- TIP125G
- TIP125F
- TIP125
- TIP122
- TIP121
- TIP120
- TIP117
- TIP116
- TIP115
- TIP112
- TIP111
- TIP110
- TIP107A
- TIP107
TIP14数据表相关新闻
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DdatasheetPDF页码索引
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