TIP141晶体管资料

  • TIP141别名:TIP141三极管、TIP141晶体管、TIP141晶体三极管

  • TIP141生产厂家:美国得克萨斯仪表公司

  • TIP141制作材料:Si-N+Darl+Di

  • TIP141性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • TIP141封装形式:直插封装

  • TIP141极限工作电压:80V

  • TIP141最大电流允许值:10A

  • TIP141最大工作频率:<1MHZ或未知

  • TIP141引脚数:3

  • TIP141最大耗散功率:125W

  • TIP141放大倍数:β>1000

  • TIP141图片代号:B-71

  • TIP141vtest:80

  • TIP141htest:999900

  • TIP141atest:10

  • TIP141wtest:125

  • TIP141代换 TIP141用什么型号代替:BDX65A,BDV65A,BDV67,BDW83B,MJ3001,FH9C,

TIP141价格

参考价格:¥4.9468

型号:TIP141G 品牌:ON SEMICONDUCTOR 备注:这里有TIP141多少钱,2024年最近7天走势,今日出价,今日竞价,TIP141批发/采购报价,TIP141行情走势销售排行榜,TIP141报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TIP141

10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

MotorolaMotorola, Inc

摩托罗拉

Motorola
TIP141

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
TIP141

NPNSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
TIP141

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
TIP141

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
TIP141

POWERTRANSISTORS(10A,60-100V,125W)

MOSPEC

MOSPEC

MOSPEC
TIP141

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC
TIP141

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain- :hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=80V(Min) •ComplementtoTypeTIP146 APPLICATIONS •Designedforgeneralpurposeamplifierandlowfrequencyswitchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
TIP141

SILICONPOWERDARLINGTONCOMPLEMENTARYTRANSISTORS

TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching

CentralCentral Semiconductor Corp

美国中央半导体

Central
TIP141

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR(HIGHDCCURRENTGAIN)

HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
TIP141

POWERDARLINGTONS

DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
TIP141

SILICONPLANARDARLINGTONPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL
TIP141

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14

COMSET

Comset Semiconductor

COMSET
TIP141

NPNSILICONPOWERDARLINGTONS

文件:92.99 Kbytes Page:4 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns
TIP141

DarlingtonComplementarySiliconPowerTransistors

文件:91.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
TIP141

封装/外壳:TO-218-3 包装:散装 描述:TRANS NPN 80V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

CentralCentral Semiconductor Corp

美国中央半导体

Central
TIP141

封装/外壳:TO-218-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN DARL 80V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SILICONPLANARDARLINGTONPOWERTRANSISTORS

SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

CDIL

CDIL

CDIL

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SILICONPLANARDARLINGTONPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL

SiliconNPNDarlingtonPowerTransistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

NPNEpitaxialSiliconDarlingtonTransistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

POWERTRANSISTORS(10A,60-100V,80W)

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP

MOSPEC

MOSPEC

MOSPEC

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

iscSiliconNPNDarlingtonPowerTransistor

文件:155.24 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DarlingtonComplementarySiliconPowerTransistors

文件:144.24 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DarlingtonComplementarySiliconPowerTransistors

文件:91.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DesignedforComplementaryUsewithTIP145,TIP146andTIP147

文件:111.96 Kbytes Page:4 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

文件:574.33 Kbytes Page:5 Pages

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TAI-SAW

iscSiliconNPNDarlingtonPowerTransistor

文件:253.42 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNEpitaxialSiliconDarlingtonTransistor

文件:314.92 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

MOLDED/POTTEDINSERTS,SNAP-INTYPEMEDIUMDUTY

文件:130.44 Kbytes Page:1 Pages

WITTEN

Witten Company, Inc.

WITTEN

LOWPROFILE-P.C.BOARDMOUNTAUDIOTRANSFORMERS

文件:376.28 Kbytes Page:2 Pages

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

P.C.BOARDMOUNTAUDIOTRANSFORMERS

文件:395.74 Kbytes Page:2 Pages

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

LOWPROFILE-P.C.BOARDMOUNTAUDIOTRANSFORMERS

文件:376.28 Kbytes Page:2 Pages

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

P.C.BOARDMOUNTAUDIOTRANSFORMERS

文件:395.74 Kbytes Page:2 Pages

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

TIP141产品属性

  • 类型

    描述

  • 型号

    TIP141

  • 功能描述

    达林顿晶体管 10A 80V Bipolar

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-4-27 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
ST
20+
TO-247
25000
全新原装现货,假一赔十
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
ST/意法
22+
N
12800
本公司只做进口原装!优势低价出售!
ST意法半导体
22+21+
TO218
3000
16年电子元件现货供应商 终端BOM表可配单提供样品
23+
N/A
85800
正品授权货源可靠
MOT
17+
TO-3P
9988
全新,原装现货 于小姐17621580780 同微QQ2107571078
MOT
04+
TO-3P
2890
全新原装进口自己库存优势
-
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
2020+
TO-220
16800
绝对原装进口现货,假一赔十,价格优势!

TIP141芯片相关品牌

  • ABLIC
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  • GREATECS
  • ILLINOISCAPACITOR
  • Infineon
  • KEMET
  • MOLEX9
  • MSYSTEM
  • SSDI
  • WTE

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