TIP141晶体管资料

  • TIP141别名:TIP141三极管、TIP141晶体管、TIP141晶体三极管

  • TIP141生产厂家:美国得克萨斯仪表公司

  • TIP141制作材料:Si-N+Darl+Di

  • TIP141性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • TIP141封装形式:直插封装

  • TIP141极限工作电压:80V

  • TIP141最大电流允许值:10A

  • TIP141最大工作频率:<1MHZ或未知

  • TIP141引脚数:3

  • TIP141最大耗散功率:125W

  • TIP141放大倍数:β>1000

  • TIP141图片代号:B-71

  • TIP141vtest:80

  • TIP141htest:999900

  • TIP141atest:10

  • TIP141wtest:125

  • TIP141代换 TIP141用什么型号代替:BDX65A,BDV65A,BDV67,BDW83B,MJ3001,FH9C,

TIP141价格

参考价格:¥4.9468

型号:TIP141G 品牌:ON SEMICONDUCTOR 备注:这里有TIP141多少钱,2025年最近7天走势,今日出价,今日竞价,TIP141批发/采购报价,TIP141行情走势销售排行榜,TIP141报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TIP141

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

Motorola

摩托罗拉

TIP141

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

ONSEMI

安森美半导体

TIP141

NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

POINN

TIP141

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

STMICROELECTRONICS

意法半导体

TIP141

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

TIP141

POWER TRANSISTORS(10A,60-100V,125W)

MOSPEC

统懋

TIP141

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain • Complement to type TIP145/146/147 APPLICATIONS • Designed for general–purpose amplifier and low frequency switching applications.

SAVANTIC

TIP141

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 80V(Min) • Complement to Type TIP146 APPLICATIONS • Designed for general purpose amplifier and low frequency switching applications.

ISC

无锡固电

TIP141

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching

Central

TIP141

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN • Complementary to TIP145/146/147

WINGS

永盛电子

TIP141

POWER DARLINGTONS

DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TIP141

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

CDIL

TIP141

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in TO-3PN plastic packtage. They are intended for use in power linear and switching application. The complementary are TIP145, TIP146, TIP14

COMSET

TIP141

NPN SILICON POWER DARLINGTONS

文件:92.99 Kbytes Page:4 Pages

Bourns

伯恩斯

TIP141

Darlington Complementary Silicon Power Transistors

文件:91.24 Kbytes Page:7 Pages

ONSEMI

安森美半导体

TIP141

封装/外壳:TO-218-3 包装:散装 描述:TRANS NPN 80V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Central

TIP141

封装/外壳:TO-218-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN DARL 80V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

TIP141

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Central

TIP141

Transistor

COMSET

TIP141

10 A,80 V,NPN 达林顿双极功率晶体管

ONSEMI

安森美半导体

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications

TEL

东电电子

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

CDIL

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

CDIL

Silicon NPN Darlington Power Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

MOSPEC

统懋

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147

SEMIHOW

isc Silicon NPN Darlington Power Transistor

文件:155.24 Kbytes Page:2 Pages

ISC

无锡固电

Darlington Complementary Silicon Power Transistors

文件:144.24 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Darlington Complementary Silicon Power Transistors

文件:91.24 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Designed for Complementary Use with TIP145, TIP146 and TIP147

文件:111.96 Kbytes Page:4 Pages

Bourns

伯恩斯

Monolithic Construction With Built In Base-Emitter Shunt Resistors

文件:574.33 Kbytes Page:5 Pages

TAI-SAW

嘉硕科技

isc Silicon NPN Darlington Power Transistor

文件:253.42 Kbytes Page:2 Pages

ISC

无锡固电

NPN Epitaxial Silicon Darlington Transistor

文件:314.92 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MOLDED/POTTED INSERTS, SNAP-IN TYPE MEDIUM DUTY

文件:130.44 Kbytes Page:1 Pages

WITTEN

LOW PROFILE - P.C. BOARD MOUNT AUDIO TRANSFORMERS

文件:376.28 Kbytes Page:2 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

P.C. BOARD MOUNT AUDIO TRANSFORMERS

文件:395.74 Kbytes Page:2 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

LOW PROFILE - P.C. BOARD MOUNT AUDIO TRANSFORMERS

文件:376.28 Kbytes Page:2 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

P.C. BOARD MOUNT AUDIO TRANSFORMERS

文件:395.74 Kbytes Page:2 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

TIP141产品属性

  • 类型

    描述

  • 型号

    TIP141

  • 功能描述

    达林顿晶体管 10A 80V Bipolar

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2025-9-27 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
3269
原厂直销,现货供应,账期支持!
三年内
1983
只做原装正品
FAIRCHILD/仙童
24+
TO 220
155581
明嘉莱只做原装正品现货
ST
NA
68500
一级代理 原装正品假一罚十价格优势长期供货
ST
23+
TO-3P
5000
专做原装正品,假一罚百!
ON
25+23+
TO-218
16457
绝对原装正品全新进口深圳现货
TIP141
34
34
ST
25+
TO-3P
18000
原厂直接发货进口原装
TI
90
全新原装 货期两周
24+
TO-3PN
10000
全新

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