丝印代码：TIP147；TO-247 Plastic-Encapsulate Transistors

Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment

POWER DARLINGTONS

DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res

PNP Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-Emitter sustaining voltage VCEO (sus) = 60V (Minimum) - TIP145 = 80V (Minimum) - TIP141, TIP146 = 100V (Minimum) - TIP142, TIP147 • Collector-Emitter saturation voltage VCE (sat) = 2V (Maximum

POWER TRANSISTORS(10A,60-100V,125W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP140, TIP141 and TIP142 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP140, TIP141 and TIP142 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

SILICON DARLINGTON TRANSISTOR PNP EPITAXIAL(HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN •Complementary to TIP140/141/142

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and low frequency switching applications.

Silicon PNP Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Complement to type TIP140/141/142 APPLICATIONS ·Designed for general–purpose amplifier and low frequency switching applications.

Complementary power Darlington transistors

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching

PNP Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

Darlington Transistor (PNP)

文件：957.73 Kbytes Page：3 Pages

Darlington Complementary Silicon Power Transistors

文件：91.24 Kbytes Page：7 Pages

封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 100V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-247-3 包装：散装 描述：TRANS PNP DARL 100V 10A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极型晶体管/BJT-其他

达林顿管

10 A，100 V，PNP 达林顿双极功率晶体管

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

文件：74.61 Kbytes Page：3 Pages

Monolithic Construction With Built In Base-Emitter Shunt Resistors

文件：98.96 Kbytes Page：3 Pages

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

PNP (HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN MIN hFE=1000@ VCE = -4V, IC= -5A Monolithic Construction With Built In Base-Emitter Shunt Resistors Industrial Use Complement to TIP140F/141F/142F

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140F/141F/142F

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Monolithic Darlington configuration ■

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP140/141/142

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

PNP Epitaxial Silicon Darlington Transistor

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) • Industrial Use • Complement to TIP140T/141T/142T

PNP Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142

Darlington Complementary Silicon Power Transistors

文件：144.24 Kbytes Page：8 Pages

Darlington Complementary Silicon Power Transistors

文件：91.24 Kbytes Page：7 Pages

Monolithic Construction With Built In Base-Emitter Shunt Resistors

文件：536.03 Kbytes Page：5 Pages

Silicon PNP transistor in a TO-220 Plastic Package.

文件：947.6 Kbytes Page：6 Pages

Silicon PNP Darlington Power Transistor

文件：79.54 Kbytes Page：2 Pages

Complementary power Darlington transistors

文件：152 Kbytes Page：8 Pages

isc Silicon PNP Darlington Power Transistor

文件：137.4 Kbytes Page：2 Pages

POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS

SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state–of–the–art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. T

Wide Bandwidth Quad JFET Input Operational Amplifiers

文件：406.13 Kbytes Page：13 Pages