TIP142晶体管资料

  • TIP142别名:TIP142三极管、TIP142晶体管、TIP142晶体三极管

  • TIP142生产厂家:美国得克萨斯仪表公司

  • TIP142制作材料:Si-N+Darl+Di

  • TIP142性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • TIP142封装形式:直插封装

  • TIP142极限工作电压:100V

  • TIP142最大电流允许值:10A

  • TIP142最大工作频率:<1MHZ或未知

  • TIP142引脚数:3

  • TIP142最大耗散功率:125W

  • TIP142放大倍数:β>1000

  • TIP142图片代号:B-71

  • TIP142vtest:100

  • TIP142htest:999900

  • TIP142atest:10

  • TIP142wtest:125

  • TIP142代换 TIP142用什么型号代替:BDX65B,BDV65B,BDV67A,BDW83C,MJ3001,FH9D,

TIP142价格

参考价格:¥4.4270

型号:TIP142 品牌:MULTICOMP 备注:这里有TIP142多少钱,2024年最近7天走势,今日出价,今日竞价,TIP142批发/采购报价,TIP142行情走势销售排行榜,TIP142报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TIP142

POWERTRANSISTORS(10A,60-100V,125W)

MOSPEC

MOSPEC

MOSPEC
TIP142

10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. •HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V •Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

MotorolaMotorola, Inc

摩托罗拉

Motorola
TIP142

NPNSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewith TIP145,TIP146andTIP147 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
TIP142

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DarlingtonComplementarySiliconPowerTransistors Designedforgeneral−purposeamplifierandlowfrequencyswitchingapplications. Features •HighDCCurrentGain− MinhFE=1000@IC =5.0A,VCE=4V •Collector−EmitterSustainingVoltage−@30mA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
TIP142

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
TIP142

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR(HIGHDCCURRENTGAIN)

HIGHDCCURRENTGAIN •ComplementarytoTIP145/146/147

WINGSWing Shing Computer Components

Wing Shing Computer Components

WINGS
TIP142

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145/146/147

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
TIP142

SILICONPOWERDARLINGTONCOMPLEMENTARYTRANSISTORS

TIP140TIP141TIP142-->NPN TIP145TIP146TIP147-->PNP DESCRIPTION: TheCENTRALSEMICONDUCTORTIP140,TIP145seriestypesareComplementarySiliconPowerDarlingtonTransistorsmanufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierandlowspeedswitching

CentralCentral Semiconductor Corp

美国中央半导体

Central
TIP142

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-3PNpackage •DARLINGTON •HighDCcurrentgain •ComplementtotypeTIP145/146/147 APPLICATIONS •Designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications.

SAVANTIC

Savantic, Inc.

SAVANTIC
TIP142

ComplementarypowerDarlingtontransistors

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
TIP142

SILICONPLANARDARLINGTONPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL
TIP142

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS

NPNSILICONDARLINGTONS,SILICONPOWERTRANSISTORS Theyaresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandare mountedinTO-3PNplasticpacktage. Theyareintendedforuseinpowerlinearandswitchingapplication. ThecomplementaryareTIP145,TIP146,TIP14

COMSET

Comset Semiconductor

COMSET
TIP142

POWERDARLINGTONS

DESCRIPTION TheTIP140,TIP141,TIP142aresiliconepitaxialbaseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinSOT-93plasticpackage.Theyareintendedforuseinpowerlinearandswitchingapplications.ThecomplementaryPNPtypesaretheT1P145,TIP146,TIP147res

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
TIP142

TO-247Plastic-EncapsulateTransistors

Features ■MonolithicDarlingtonconfiguration ■Integratedantiparallelcollector-emitterdiode Applications ■Linearandswitchingindustrialequipment

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
TIP142

封装/外壳:TO-218-3 包装:散装 描述:TRANS NPN 100V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

CentralCentral Semiconductor Corp

美国中央半导体

Central
TIP142

封装/外壳:TO-247-3 包装:散装 描述:TRANS NPN DARL 100V 10A TO247-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
TIP142

iscSiliconNPNDarlingtonPowerTransistor

文件:314.16 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
TIP142

NPNSILICONPOWERDARLINGTONS

文件:92.99 Kbytes Page:4 Pages

BournsBourns Inc.

伯恩斯(邦士)

Bourns
TIP142

DarlingtonComplementarySiliconPowerTransistors

文件:91.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

TO-3PFullyIsolatedPlasticPackageTransistorCDIL

CDIL

CDIL

CDIL

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementtoTIP145F/146F/147F •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SILICONPLANARDARLINGTONPOWERTRANSISTORS

SILICONPLANARDARLINGTONPOWERTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

SILICONPLANARDARLINGTONPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

CDIL

CDIL

SiliconNPNtransistorinaTO-220PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features Monolithicconstructionwithbuiltinbase-emittershuntresistors,HighDCcurrentgaincomplementtoTIP147T. Applications Linearandswitchingindustrialequipment.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

NPNEpitaxialSiliconDarlingtonTransistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNDarlingtonPowerTransistor

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,lc=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

Features •MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •HighDCCurrentGain:hFE=1000@VCE=4V,IC=5A(Min.) •IndustrialUse •ComplementtoTIP145T/146T/147T

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

POWERTRANSISTORS(10A,60-100V,80W)

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlowspeedswitchingapplications. 10AMPEREDARLINGTIOONCOM:EMEMTARYSILICONPOWERTRANSISTORS60-100VOLTS80WATTS TIP140T,TIP141T,TIP142T-->NPN TIP145T,TIP146T,TIP147T--->PNP

MOSPEC

MOSPEC

MOSPEC

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors -HighDCCurrentGain:hFE=1000@VCE=2V,IC=5A(Min.) -Collector-EmitterSustainingVoltage -LowCollector-EmitterSaturationVoltage -IndustrialUse -ComplementarytoTIP145/146/147

SEMIHOW

SemiHow Co.,Ltd.

SEMIHOW

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■MonolithicDarlingtonconfiguration ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SILICONPLANARPOWERDARLINGTONTRANSISTORS

SILICONPLANARPOWERDARLINGTONTRANSISTORS ForuseinPowerLinearandSwitchingApplications

TEL

TRANSYS Electronics Limited

TEL

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain- :hFE=1000(Min)@IC=5A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=100V(Min) •ComplementtoTypeTIP147T APPLICATIONS •Designedforgeneralpurposeamplifierandlowspeed switchingapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DarlingtonTRANSISTOR(NPN)

Features Monolithicconstructionwithbuiltinbase-emittershuntresistors HighDCcurrentgaincomplementtoTIP147T. Applications Linearandswitchingindustrialequipment.

FS

First Silicon Co., Ltd

FS

SILICONPLANARPOWERDARLINGTONTRANSISTORS

SILICONPLANARPOWERDARLINGTONTRANSISTORS ForuseinPowerLinearandSwitchingApplications

CDIL

CDIL

CDIL

SILICONPLANARPOWERDARLINGTONTRANSISTORS

SILICONPLANARPOWERDARLINGTONTRANSISTORS ForuseinPowerLinearandSwitchingApplications

CDIL

CDIL

CDIL

iscSiliconNPNDarlingtonPowerTransistor

文件:314.16 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconNPNDarlingtonPowerTransistor

文件:154.95 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DarlingtonComplementarySiliconPowerTransistors

文件:91.24 Kbytes Page:7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DarlingtonComplementarySiliconPowerTransistors

文件:144.24 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementarypowerDarlingtontransistors

文件:152 Kbytes Page:8 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

文件:574.33 Kbytes Page:5 Pages

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TAI-SAW

NPNEpitaxialSiliconDarlingtonTransistor

文件:314.92 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

ComplementarypowerDarlingtontransistors

文件:152 Kbytes Page:8 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1/2(12.7mm)Single-TurnWirewoundServoMountTypePrecisionPotentiometerS

FEATURES •Ohmicvaluerange:50upto20k •Smallestsizeavailable:12.7mm •Centertaponrequest •Customshaftsavailableonrequest •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

Vishay

AluminumElectrolyticCapacitorsRadialHighTemperatureStandard

FEATURES •Usefullife:2500hat105°C •Miniaturized,highCV-productperunitvolume •Chargeanddischargeproof •Polarizedaluminumelectrolyticcapacitors,non-solid electrolyte •Radialleads,cylindricalaluminumcase,insulatedwitha bluesleeve •PressurereliefforcaseØD≥

VishayVishay Siliconix

威世科技

Vishay

TemperatureSensorsLineGuide

文件:736.09 Kbytes Page:11 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell

AluminumCapacitorsRadialHighTemperatureStandard

文件:125.94 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

AluminumElectrolyticCapacitors

文件:135.22 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

TIP142产品属性

  • 类型

    描述

  • 型号

    TIP142

  • 功能描述

    达林顿晶体管 NPN Power Darlington

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-4-19 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-3P
2000
全新原装假一赔十
onsemi
23+
TO-247-3
30000
晶体管-分立半导体产品-原装正品
ST
1408+
TO220
198000
绝对原装进口现货可开增值税发票
ST(意法半导体)
22+
TO-247
10000
只做原装现货 假一赔万
ST/意法
21+
TO220
9852
只做原装正品假一赔十!正规渠道订货!
STMicro.
23+
TO-247
7750
全新原装优势
ST/意法半导体
2023
TO-220-3
6000
公司原装现货/支持实单
ST
21+
DIP
9888
全新,原装现货 于小姐17621580780 同微QQ2107571078
ST
17+
TO-220
1000
原装现货热卖
FSC
1415+
TO-252
28500
全新原装正品,优势热卖

TIP142芯片相关品牌

  • Altera
  • BILIN
  • Cree
  • ETC
  • HY
  • LUMILEDS
  • MOLEX2
  • OHMITE
  • RCD
  • spansion
  • TOKEN
  • VBSEMI

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