POWER TRANSISTORS(10A,60-100V,125W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR(HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN • Complementary to TIP145/146/147

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/146/147

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • High DC current gain • Complement to type TIP145/146/147 APPLICATIONS • Designed for general–purpose amplifier and low frequency switching applications.

Complementary power Darlington transistors

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP145, TIP146 and TI

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in TO-3PN plastic packtage. They are intended for use in power linear and switching application. The complementary are TIP145, TIP146, TIP14

POWER DARLINGTONS

DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-Emitter sustaining voltage VCEO (sus) = 60V (Minimum) - TIP145 = 80V (Minimum) - TIP141, TIP146 = 100V (Minimum) - TIP142, TIP147 • Collector-Emitter saturation voltage VCE (sat) = 2V (Maximum

TO-247 Plastic-Encapsulate Transistors

Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment

Monolithic Construction With Built In Base- Emitter Shunt Resistors

文件：104.38 Kbytes Page：4 Pages

封装/外壳：TO-247-3 包装：散装 描述：TRANS NPN DARL 100V 10A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极型晶体管/BJT-其他

100V,10A,Complementary Power Darlington Transistor

10 A，100 V，NPN 达林顿双极功率晶体管

封装/外壳：TO-218-3 包装：散装 描述：TRANS NPN 100V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon NPN Darlington Power Transistor

文件：314.16 Kbytes Page：2 Pages

NPN SILICON POWER DARLINGTONS

文件：92.99 Kbytes Page：4 Pages

Darlington Complementary Silicon Power Transistors

文件：91.24 Kbytes Page：7 Pages

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Monolithic construction with built in base-emitter shunt resistors, High DC current gain complement to TIP147T. Applications Linear and switching industrial equipment.

NPN Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

Silicon NPN Darlington Power Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Monolithic Darlington configuration ■

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= 5A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Complement to Type TIP147T APPLICATIONS • Designed for general purpose amplifier and low speed switching applications.

Darlington TRANSISTOR (NPN)

Features Monolithic construction with builtin base-emitter shunt resistors High DC current gain complement to TIP147T. Applications Linear and switching industrial equipment.

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

NPN Epitaxial Silicon Darlington Transistor

Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T

SILICON PLANAR POWER DARLINGTON TRANSISTORS

SILICON PLANAR POWER DARLINGTON TRANSISTORS For use in Power Linear and Switching Applications

isc Silicon NPN Darlington Power Transistor

文件：314.16 Kbytes Page：2 Pages

isc Silicon NPN Darlington Power Transistor

文件：154.95 Kbytes Page：2 Pages

Darlington Complementary Silicon Power Transistors

文件：91.24 Kbytes Page：7 Pages

Darlington Complementary Silicon Power Transistors

文件：144.24 Kbytes Page：8 Pages

Complementary power Darlington transistors

文件：152 Kbytes Page：8 Pages

Monolithic Construction With Built In Base-Emitter Shunt Resistors

文件：574.33 Kbytes Page：5 Pages

NPN Epitaxial Silicon Darlington Transistor

文件：314.92 Kbytes Page：5 Pages

Complementary power Darlington transistors

文件：152 Kbytes Page：8 Pages

1/2 (12.7 mm) Single - Turn Wirewound Servo Mount Type Precision PotentiometerS

FEATURES • Ohmic value range: 50  up to 20 k • Smallest size available: 12.7 mm • Center tap on request • Custom shafts available on request • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Aluminum Electrolytic Capacitors Radial High Temperature Standard

FEATURES • Useful life: 2500 h at 105 °C • Miniaturized, high CV-product per unit volume • Charge and discharge proof • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case, insulated with a blue sleeve • Pressure relief for case Ø D ≥

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages

Aluminum Capacitors Radial High Temperature Standard

文件：125.94 Kbytes Page：9 Pages

Aluminum Electrolytic Capacitors

文件：135.22 Kbytes Page：9 Pages