Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications

isc Silicon NPN Darlington Power Transistor

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SILICON PLANAR DARLINGTON POWER TRANSISTORS

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und