Darlington Complementary Silicon Power Transistors

Designed for general−purpose amplifier and low frequency switching applications.

Features

• High DC Current Gain −

Min hFE = 1000 @ IC

= 5.0 A, VCE = 4 V

• Collector−Emitter Sustaining Voltage − @ 30 mA

VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145

= 80 Vdc (Min) − TIP141, TIP146

= 100 Vdc (Min) − TIP142, TIP147

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Pb−Free Packages are Available*