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STW36NM60ND价格
参考价格：￥30.1247
型号：STW36NM60ND 品牌：STMicroelectronics 备注：这里有STW36NM60ND多少钱，2025年最近7天走势，今日出价，今日竞价，STW36NM60ND批发/采购报价，STW36NM60ND行情走势销售排行榜，STW36NM60ND报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STW36NM60ND | Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 |   | |
STW36NM60ND | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 29A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.11Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247 Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications – Automotive Description This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new ve | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 | |
STW36NM60ND产品属性
- 类型
描述
- 型号
STW36NM60ND
- 制造商
STMicroelectronics
- 功能描述
POWER MOSFET - Rail/Tube
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 29A TO-247
- 制造商
STMicroelectronics
- 功能描述
STW36NM60ND Series N-Channel 600 V 110 mOhm FDmesh II Power Mosfet - TO-247-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
|||
STM |
20+ |
TO-247-3 |
55130 |
15年光格 只做原装正品 |
|||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
|||
STM |
23+ |
TO-247-3 |
50000 |
原装正品 支持实单 |
|||
ST/意法 |
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
||||
ST(意法半导体) |
24+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
STM |
20+ |
54830 |
TO-247-3 |
||||
ST/意法 |
22+ |
N/A |
55140 |
现货,原厂原装假一罚十! |
|||
ST/意法 |
24+ |
TO-247 |
60000 |
全新原装现货 |
STW36NM60ND规格书下载地址
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