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STB36NM60N价格
参考价格：￥44.0228
型号：STB36NM60N 品牌：STMicroelectronics 备注：这里有STB36NM60N多少钱，2025年最近7天走势，今日出价，今日竞价，STB36NM60N批发/采购报价，STB36NM60N行情走势销售排行榜，STB36NM60N报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STB36NM60N | Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 |   | |
STB36NM60N | Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | | |
Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247 Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications – Automotive Description This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new ve | STMICROELECTRONICS 意法半导体 | |
STB36NM60N产品属性
- 类型
描述
- 型号
STB36NM60N
- 功能描述
MOSFET N-Ch 600V 0.092Ohm 29A MDMesh II MOS
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
TO-263-3 |
16960 |
原装正品现货支持实单 |
|||
ST/意法半导体 |
21+ |
TO-263-3 |
8860 |
只做原装,质量保证 |
|||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
ST |
23+ |
TO-263-3 |
16800 |
进口原装现货 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST(意法半导体) |
24+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ST |
23+ |
TO263 |
6996 |
只做原装正品现货 |
|||
ST/意法半导体 |
23+ |
TO-263-3 |
12820 |
正规渠道,只有原装! |
|||
ST/意法 |
2023+ |
TO263 |
6893 |
专注全新正品,优势现货供应 |
|||
STMicroelectronics |
21+ |
D2PAK |
1000 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
STB36NM60N规格书下载地址
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DdatasheetPDF页码索引
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