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STB36NM60ND价格
参考价格:¥17.5663
型号:STB36NM60ND 品牌:STMicroelectronics 备注:这里有STB36NM60ND多少钱,2025年最近7天走势,今日出价,今日竞价,STB36NM60ND批发/采购报价,STB36NM60ND行情走势销售排行榜,STB36NM60ND报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
STB36NM60ND | Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 | ||
Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | |||
Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 | |||
Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | |||
N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247 Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications – Automotive Description This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new ve | STMICROELECTRONICS 意法半导体 |
STB36NM60ND产品属性
- 类型
描述
- 型号
STB36NM60ND
- 制造商
STMicroelectronics
- 功能描述
POWER MOSFET - Tape and Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ST/意法半导体 |
2021+ |
TO-263-3 |
1000 |
只做原装,可提供样品 |
|||
ST/意法半导体 |
25+ |
TO-263-3 |
6000 |
原厂原装 欢迎询价 |
|||
ST/意法半导体 |
25+ |
TO-263-3 |
8880 |
原装认准芯泽盛世! |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST/意法半导体 |
23+ |
TO-263-3 |
12700 |
买原装认准中赛美 |
|||
ST/意法半导体 |
21+ |
TO-263-3 |
8080 |
只做原装,质量保证 |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
STB36NM60ND规格书下载地址
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DdatasheetPDF页码索引
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