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STB36NM60ND价格
参考价格：￥17.5663
型号：STB36NM60ND 品牌：STMicroelectronics 备注：这里有STB36NM60ND多少钱，2025年最近7天走势，今日出价，今日竞价，STB36NM60ND批发/采购报价，STB36NM60ND行情走势销售排行榜，STB36NM60ND报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STB36NM60ND | Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 |   | |
Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa | STMICROELECTRONICS 意法半导体 | | ||
Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247 Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications – Automotive Description This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new ve | STMICROELECTRONICS 意法半导体 | |
STB36NM60ND产品属性
- 类型
描述
- 型号
STB36NM60ND
- 制造商
STMicroelectronics
- 功能描述
POWER MOSFET - Tape and Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
ST/意法半导体 |
24+ |
TO-263-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
STM |
23+ |
D2PAK |
50000 |
原装正品 支持实单 |
|||
ST/意法半导体 |
24+ |
TO-263-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ST(意法半导体) |
2447 |
D2PAK |
105000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
ST/意法半导体 |
2023+ |
TO-263-3 |
6000 |
原装正品现货、支持第三方检验、终端BOM表可配单提供 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
2022+ |
TO-263-3 |
6900 |
原厂原装,假一罚十 |
|||
Sage Millmeter |
24+ |
模块 |
400 |
STB36NM60ND规格书下载地址
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DdatasheetPDF页码索引
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