Description

These FDmesh™ II Power MOSFETs with

intrinsic fast-recovery body diode are produced

using the second generation of MDmesh™

technology. Utilizing a new strip-layout vertical

structure, these revolutionary devices feature

extremely low on-resistance and superior

switching performance. They are ideal for bridge

topologies and ZVS phase-shift converters.

Features

• Designed for automotive applications and

AEC-Q101 qualified

• 100 avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

• Extremely high dv/dt and avalanche

capabilities

Applications

• Automotive switching applications