型号 功能描述 生产厂家&企业 LOGO 操作

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.5ohm-6ATO-247Zener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP7NC80产品属性

  • 类型

    描述

  • 型号

    STP7NC80

  • 功能描述

    MOSFET TO-220AB

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-16 15:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
TO-220F
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
ST/意法
TO-220F
265209
假一罚十,原包原标签,常备现货
ST-意法半导体
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
ST/意法
24+
TO220F
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
ST/意法
22+
TO-220F
20000
原装现货,实单支持
S
23+
TO-220FP
10000
公司只做原装正品
ST
17+
TO-220F
15000
原装现货热卖
ST
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!
ST/意法
22+
TO-220F
20000
原装现货,实单支持
ST
22+
TO-220F
28600
只做原装正品现货假一赔十一级代理

STP7NC80芯片相关品牌

  • AVAGO
  • DAESAN
  • HONEYWELL-ACC
  • HUBERSUHNER
  • IXYS
  • LITEON
  • Micron
  • MMD
  • NJSEMI
  • ROSENBERGER
  • Vicor
  • WALL

STP7NC80数据表相关新闻