型号 功能描述 生产厂家&企业 LOGO 操作
STW7NC80Z

N-CHANNEL800V-1.5ohm-6ATO-247Zener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

STW7NC80Z产品属性

  • 类型

    描述

  • 型号

    STW7NC80Z

  • 功能描述

    MOSFET TO-247

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-5-16 11:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST品牌
2016+
TO-247
6528
房间原装进口现货假一赔十
ST/意法
24+
NA/
50
优势代理渠道,原装正品,可全系列订货开增值税票
ST
23+
TO-247
8560
受权代理!全新原装现货特价热卖!
ST/意法
23+
TO-247
50000
全新原装正品现货,支持订货
ADI
23+
TO-247
8000
只做原装现货
ST
25+23+
TO-247
28234
绝对原装正品全新进口深圳现货
ST
18+
TO-247
85600
保证进口原装可开17%增值税发票
24+
ST(3P)
6430
原装现货/欢迎来电咨询
ST
24+
TO-247
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
21+
TO-247
23480

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