位置：首页 > IC中文资料第1270页 > STW7NC80Z
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STW7NC80Z | N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 |   | |
STW7NC80Z | N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH™III MOSFET | STMICROELECTRONICS 意法半导体 | | |
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | |
STW7NC80Z产品属性
- 类型
描述
- 型号
STW7NC80Z
- 功能描述
MOSFET TO-247
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2511 |
TO-247 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST/意法 |
23+ |
TO-247 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
24+ |
TO-3P |
1000 |
原装现货热卖 |
|||
ST |
23+ |
TO-3P |
65480 |
||||
ST |
23+24 |
TO-247 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
23+ |
TO-3P |
8795 |
||||
24+ |
ST(3P) |
6430 |
原装现货/欢迎来电咨询 |
||||
ST/意法 |
22+ |
TO-247 |
97181 |
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STW7NC80Z规格书下载地址
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製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: Through Hole 封裝/外殼: TO-247-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 950 V Id - C連續漏極電流: 9 A Rds On - 漏-源電阻: 1.25 Ohms Vgs - 閘極-源極電壓: - 30 V， + 30 V Vgs th - 門源門限電壓 :
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DdatasheetPDF页码索引
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