型号 功能描述 生产厂家&企业 LOGO 操作
STW7NC80Z

N-CHANNEL800V-1.5ohm-6ATO-247Zener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL800V-1.3ohm-6.5ATO-220/FP/D2PAK/I2PAKZener-ProtectedPowerMESH?줚IIMOSFET

DESCRIPTION ThethirdgenerationofMESHOVERLAY™PowerMOSFETsforveryhighvoltageexhibitsunsurpassedon-resistanceperunitareawhileintegratingback-to-backZenerdiodesbetweengateandsource.SucharrangementgivesextraESDcapabilitywithhigherruggednessperformanceasrequestedb

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STW7NC80Z产品属性

  • 类型

    描述

  • 型号

    STW7NC80Z

  • 功能描述

    MOSFET TO-247

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-17 18:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST品牌
2016+
TO-247
6528
房间原装进口现货假一赔十
ST
23+
TO-3P
65480
ST/意法半导体
22+
TO-247
25000
只做原装进口现货,专注配单
ST
23+
TO-3P
8795
ST/意法
23+
TO-247
90000
只做原厂渠道价格优势可提供技术支持
ST
TO-247
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
ST
17+
TO-3P
1000
原装现货热卖
ST/意法
24+
TO-247
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
ST
22+23+
TO-247
28234
绝对原装正品全新进口深圳现货
ST-意法半导体
24+25+/26+27+
TO-247-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库

STW7NC80Z芯片相关品牌

  • DATADELAY
  • Fujitsu
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  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

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