位置：首页 > IC中文资料第11754页 > STP7NC80ZFP
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP7NC80ZFP | N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 |   | |
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | |
STP7NC80ZFP产品属性
- 类型
描述
- 型号
STP7NC80ZFP
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
TO-220F |
20000 |
原装现货,实单支持 |
|||
ST |
24+ |
TO-220F |
15000 |
原装现货热卖 |
|||
ST |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
ST |
2020+ |
TO-220 |
6050 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
25+ |
TO220F |
16900 |
原装，请咨询 |
|||
ST/意法 |
24+ |
TO-220F |
60000 |
全新原装现货 |
|||
ST |
24+ |
TO220 |
200000 |
原装进口正口,支持样品 |
|||
ST |
23+ |
TO-220F |
8795 |
||||
ST |
17+ |
TO-220F |
6200 |
||||
ST/意法 |
22+ |
TO-220F |
19032 |
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STP7NC80ZFP规格书下载地址
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2020-6-26
DdatasheetPDF页码索引
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