位置：首页 > IC中文资料第1225页 > STP7NC80Z
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP7NC80Z | N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 |   | |
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH?줚II MOSFET DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b | STMICROELECTRONICS 意法半导体 | |
STP7NC80Z产品属性
- 类型
描述
- 型号
STP7NC80Z
- 功能描述
MOSFET TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TO-220 |
15000 |
原装现货热卖 |
|||
ST |
25+ |
TO-220 |
6050 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
1932+ |
TO-220F |
462 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
TO-220 |
8795 |
||||
ST/意法 |
24+ |
TO-220F |
60000 |
全新原装现货 |
|||
ST |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
25+ |
TO-TO-220 |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
ST/意法 |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
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STP7NC80Z规格书下载地址
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2020-6-26
DdatasheetPDF页码索引
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