型号 功能描述 生产厂家 企业 LOGO 操作

N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c

STMICROELECTRONICS

意法半导体

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.12Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™ strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufa

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

STMICROELECTRONICS

意法半导体

更新时间:2026-1-1 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
TO-220F-3
50000
全新原装正品现货,支持订货
ST/意法
25+
原厂原封可拆样
65248
百分百原装现货 实单必成
ST
24+
TO-220F
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST
2021+
TO-220
6800
原厂原装,欢迎咨询
ST/意法
23+
SOP16
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
24+
TO-220
10000
原装现货热卖
ST
0233+
TO-220
240
原装
Lyontek
23+24
BGA
27960
原装现货.优势热卖.终端BOM表可配单
ST
2023+
31000
进口原装现货
ST/意法
24+
65230

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