型号 功能描述 生产厂家&企业 LOGO 操作
STP16NE06LFP

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™ strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufa

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man

STMICROELECTRONICS

意法半导体

更新时间:2025-8-7 10:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TO-220F
8795
ST
24+
N/A
4000
ST
22+
TO-220
5000
原装现货库存.价格优势
ST全系列
25+23+
TO-220F
26268
绝对原装正品全新进口深圳现货
ST
2016+
TO220
6000
只做原装,假一罚十,公司可开17%增值税发票!
STMicroelectronics
24+
NA
3000
进口原装正品优势供应
ST
16+
TO-220
10000
全新原装现货
STMicroelectronics
20+
SOP8
1000
全新现货热卖中欢迎查询
ST
23+
TO220
15000
全新原装现货,价格优势
ST
2022+
70
全新原装 货期两周

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