STP16NE06参数引脚图供应代理商意法半导体-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

型号	功能描述	生产厂家企业	LOGO
STP16NE06	N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP16NE06	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.1Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
STP16NE06	N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP16NE06FP	N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP16NE06FP	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.1Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
STP16NE06FP	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP16NE06L	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP16NE06L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.12Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
STP16NE06L/FP	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP16NE06LFP	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP16NE06LFP	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.12Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
STP16NE06LSLASHFP	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
P16NE06	N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
P16NE06FP	N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low on resistance, rugged avalance characteristics and less c	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD16NE06	N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”STripFET™ strip-based process.The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufa	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD16NE06L	N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable man	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

STP16NE06产品属性

类型
描述
型号
STP16NE06
功能描述
MOSFET TO-220 N-CH 60V 16A
RoHS
否
制造商
STMicroelectronics
晶体管极性
N-Channel
汲极/源极击穿电压
650 V
闸/源击穿电压
25 V
漏极连续电流
130 A 电阻汲极/源极
RDS（导通）
0.014 Ohms
配置
Single
安装风格
Through Hole
封装/箱体
Max247
封装
Tube

STP16NE06供应商更多...

更新时间：2026-1-5 15:39:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	STP16NE06	ST/意法	24+		65230		询价
深圳市诺美思科技有限公司	STP16NE06	SST		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市亿联芯电子科技有限公司	STP16NE06	ST/意法	2023+	TO-220	6893	专注全新正品,优势现货供应	询价
深圳市一线半导体有限公司	STP16NE06FP	STM	24+	TO2203	120		询价
千层芯半导体(深圳)有限公司	STP16NE06	ST	24+	TO-220	10000	原装现货热卖	询价
深圳市星佑电子有限公司	STP16NE06	ST	0233+	TO-220	240	原装	询价
深圳市英科美电子有限公司	STP16NE06	ST/意法	2223+	TO-220	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市昌和盛利电子有限公司	STP16NE06PBF	STM	NEW	TO-220	8795	代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订	询价
洪芯国际半导体（深圳）有限公司	STP16NE06LFP	ST	25+	SOT23-5	86720	代理授权原装正品价格最实惠本公司承诺假一赔百	询价
艾睿（深圳）半导体有限公司	STP16NE06L	ST	2447	TO-220	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

STP16NE06芯片相关品牌

STP16NE06规格书下载地址

STP16NE06参数引脚图相关

STP16NE06数据表相关新闻

STP16CPS05TTR
全新原装现货支持第三方机构验证
2022-6-11
STP18N65M2
通孔 N 通道 650 V 12A（Tc） 110W（Tc） TO-220
2022-4-21
STP25NM60ND原装现货
瀚佳科技（深圳）有限公司专业进口电子元器件代理商
2020-8-24
STP16N65M5全新原装现货
瀚佳科技（深圳）有限公司专业进口电子元器件代理商
2019-8-28
STP16CP05XTTR全新原装现货
瀚佳科技（深圳）有限公司专业进口电子元器件代理商
2019-8-28
STP20N95K5
STP20N95K5
2019-6-18

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

STP16NE06产品属性

STP16NE06供应商更多...

STP16NE06芯片相关品牌

STP16NE06规格书下载地址

STP16NE06参数引脚图相关

STP16NE06数据表相关新闻

STP16CPS05TTR

STP18N65M2

STP25NM60ND原装现货

STP16N65M5全新原装现货

STP16CP05XTTR全新原装现货

STP20N95K5

DdatasheetPDF页码索引