型号 功能描述 生产厂家&企业 LOGO 操作
STP16NE06

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNELENHANCEMENTMODESINGLEFEATURESIZE]POWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONunique”SingleFeatureSize”processwherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandless

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL60V-0.08ohm-16A-TO-220/TO-220FPSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSizeprocesswherebyasinglebodyisimplantedonastriplayoutstructure.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlessc

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL60V-0.07ohm-16ADPAK/IPAKSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique”STripFET™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkablemanufa

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

N-CHANNEL60V-0.07ohm-16A-DPAKSTripFETPOWERMOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSGS-THOMSONuniqueSingleFeatureSize™strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemarkableman

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

STP16NE06产品属性

  • 类型

    描述

  • 型号

    STP16NE06

  • 功能描述

    MOSFET TO-220 N-CH 60V 16A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-7-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
3461
原厂直销,现货供应,账期支持!
ST/意法
25+
原厂原封可拆样
65248
百分百原装现货 实单必成
ST
24+
TO-220F
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST
24+
TO-220
10000
原装现货热卖
ST
0233+
TO-220
240
原装
ST
17+
TO-220
6200
ST
23+
TO-220
15000
专做原装正品,假一罚百!
ST/意法
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险
ST
23+
TO-220
8795
ST全系列
25+23+
TO-220F
26269
绝对原装正品全新进口深圳现货

STP16NE06芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

STP16NE06数据表相关新闻