N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

Features  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench

N-channel 200 V, 0.10 Ω, 15 A PowerFLAT™ (5x6) low gate charge STripFET™ Power MOSFET

Features ■ Exceptional dv/dt capability ■ Low gate charge ■ 100 avalanche tested Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate c

N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET

General Features ■ WORLDWIDE LOWEST GATE CHARGE ■ TYPICAL RDS(on) = 0.088Ω ■ IMPROVED DIE-TO-FOOTPRINT RATIO ■ VERY LOW PROFILE PACKAGE (1mm MAX) ■ VERY LOW THERMAL RESISTANCE ■ LOW GATE RESISTANCE ■ LOW INPUT CAPACITANCE ■ HIGH dv/dt and AVALANCHE CAPABILITIES DESCRIPTION This 200V MO

N-channel enhancement mode

文件：900.01 Kbytes Page：14 Pages

Dual N-channel 100 V, 0.065 Ohm typ., 5 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island

Automotive-grade dual N-channel 60 V, 27 mOhm typ., 20 A STripFET II Power MOSFET in a PowerFLAT 5x6 DI package

Automotive-grade dual N-channel 60 V

文件：972.74 Kbytes Page：15 Pages

N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a PowerFLAT 5x6 HV package

High avalanche ruggedness

文件：409.65 Kbytes Page：13 Pages

60 N-Channel Enhancement Mode Power MOSFET

文件：1.27483 Mbytes Page：5 Pages

Automotive-grade N-channel 60 V

文件：946.04 Kbytes Page：14 Pages

N-CHANNEL 200V - 0.088廓 - 20A PowerFLAT??ULTRA LOW GATE CHARGE MDmesh??II MOSFET

文件：453.63 Kbytes Page：10 Pages

N-CHANNEL 200V - 0.088廓 - 20A PowerFLAT??ULTRA LOW GATE CHARGE MDmesh??II MOSFET

文件：453.63 Kbytes Page：10 Pages