包装：散装 描述：TOOL CABLE TIE LOVOLT LT-HVY 工具 线缆扎带枪和配件

N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET

Features •Best-in-classSOAcapability •Highcurrentsurgecapability •Extremelylowon-resistance Applications •Hot-swap •Electronicfuse •Loadswitch •In-rushcurrentlimiter Description ThisN-channelPowerMOSFETutilizestheSTripFETF7technologywithan enhancedtrenchgat

N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET

Features ■Ultralowon-resistance ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET™IIIPowerMOSFETtechnologyis amongthelatestimprovements,whichhavebeen especiallytailoredtominimizeon-stateresistance providingsuperiorswitchingperf

N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features •AmongthelowestRDS(on)onthemarket •Excellentfigureofmerit(FoM) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilize STripFET™F7technologywithanenhanced tren

N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features •AmongthelowestRDS(on)onthemarket •Excellentfigureofmerit(FoM) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications •Switchingapplications Description TheseN-channelPowerMOSFETsutilize STripFET™F7technologywithanenhanced tren

N-channel 60 V, 1.7 m廓 typ., 180 A STripFET??VI DeepGATE??Power MOSFET in H짼PAK-2 package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET™DeepGATE™technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ■Lowgatecharge ■Verylowon-resistance ■Highavalancheru

N-Channel Power MOSFET

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.4mΩ(Max)@VGS=10V APPLICATIONS ·Switchingapplications ·Powertools ·Motorcontrol

Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A

Features Designedforautomotiveapplicationsand AEC-Q101qualified AmongthelowestRDS(on)onthemarket ExcellentFoM(figureofmerit) LowCrss/CissratioforEMIimmunity Highavalancheruggedness Applications Switchingapplications Description ThisN-channelPower

Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package

Features •AEC-Q101qualified •Industry’slowestRDS(on)xarea •Industry’sbestFoM(figureofmerit) •Ultra-lowgatecharge •100avalanchetested Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmeshK5 technologybasedonaninnovativeproprietaryvert

High avalanche ruggedness

文件：905.12 Kbytes Page：16 Pages

Automotive N-channel 950 V, 0.280 廓 typ., 17.5 A MDmesh??K5 Power MOSFET in an H짼PAK-2 package

文件：679.86 Kbytes Page：16 Pages

Ultra low on-resistance

文件：774.72 Kbytes Page：17 Pages

Ultra low on-resistance

文件：774.72 Kbytes Page：17 Pages

Conduction losses reduced

文件：878.05 Kbytes Page：18 Pages

Conduction losses reduced

文件：878.05 Kbytes Page：18 Pages

Automotive-grade N-channel 75 V, 2.6 m??typ., 180 A STripFET??F3 Power MOSFET in a H짼PAK-6 package

文件：869.18 Kbytes Page：16 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

Ultra low on-resistance

文件：713.22 Kbytes Page：13 Pages

Very low on-resistance

文件：817.26 Kbytes Page：13 Pages

Very low gate charge

文件：704.78 Kbytes Page：18 Pages

Very low gate charge

文件：704.78 Kbytes Page：18 Pages

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET III Power MOSFET

文件：1.02386 Mbytes Page：19 Pages

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET??III Power MOSFET in H2PAK-2 and H2PAK-6 packages

文件：1.02386 Mbytes Page：19 Pages

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET??III Power MOSFET in H2PAK-2 and H2PAK-6 packages

文件：1.02386 Mbytes Page：19 Pages

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET III Power MOSFET

文件：1.02386 Mbytes Page：19 Pages

N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220

文件：1.67338 Mbytes Page：21 Pages

N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220

文件：1.67338 Mbytes Page：21 Pages

AEC-Q101 qualified

文件：889.21 Kbytes Page：18 Pages

AEC-Q101 qualified

文件：889.21 Kbytes Page：18 Pages

包装：卷带（TR） 描述：MOSFET N-CH 60V H2PAK-2 分立半导体产品 晶体管 - FET，MOSFET - 单个

High avalanche ruggedness

文件：486.89 Kbytes Page：19 Pages

High avalanche ruggedness

文件：486.89 Kbytes Page：19 Pages