包装：散装 描述：TOOL CABLE TIE LOVOLT LT-HVY 工具 线缆扎带枪和配件

N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET

Features • Best-in-class SOA capability • High current surge capability • Extremely low on-resistance Applications • Hot-swap • Electronic fuse • Load switch • In-rush current limiter Description This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gat

N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET™ III Power MOSFET

Features ■ Ultra low on-resistance ■ 100 avalanche tested Application ■ Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching perf

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 75V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.4mΩ(Max)@VGS= 10V APPLICATIONS · Switching applications

N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced tren

N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced tren

N-channel 60 V, 1.7 m廓 typ., 180 A STripFET??VI DeepGATE??Power MOSFET in H짼PAK-2 package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ■ Low gate charge ■ Very low on-resistance ■ High avalanche ru

N-Channel Power MOSFET

FEATURES ·Drain Current -ID= 180A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.4mΩ(Max)@VGS= 10V APPLICATIONS ·Switching applications ·Power tools ·Motor control

Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A

Features  Designed for automotive applications and AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power

Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vert

High avalanche ruggedness

High avalanche ruggedness

文件：905.12 Kbytes Page：16 Pages

Automotive-grade N-channel 950 V, 280 mOhm typ., 17.5 A MDmesh K5 Power MOSFET in an H2PAK-2 package

Automotive N-channel 950 V, 0.280 廓 typ., 17.5 A MDmesh??K5 Power MOSFET in an H짼PAK-2 package

文件：679.86 Kbytes Page：16 Pages

Ultra low on-resistance

文件：774.72 Kbytes Page：17 Pages

N沟道100 V、0.002 Ohm典型值、180 A STripFET F7功率MOSFET，H2PAK-2封装

Ultra low on-resistance

文件：774.72 Kbytes Page：17 Pages

Conduction losses reduced

文件：878.05 Kbytes Page：18 Pages

Conduction losses reduced

文件：878.05 Kbytes Page：18 Pages

Automotive-grade N-channel 75 V, 2.6 m??typ., 180 A STripFET??F3 Power MOSFET in a H짼PAK-6 package

文件：869.18 Kbytes Page：16 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

High Industrial Performance (HIPak) Solid-State Relays

文件：444.35 Kbytes Page：4 Pages

Ultra low on-resistance

文件：713.22 Kbytes Page：13 Pages

Very low on-resistance

文件：817.26 Kbytes Page：13 Pages

Very low gate charge

文件：704.78 Kbytes Page：18 Pages

Very low gate charge

文件：704.78 Kbytes Page：18 Pages

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET III Power MOSFET

文件：1.02386 Mbytes Page：19 Pages

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET??III Power MOSFET in H2PAK-2 and H2PAK-6 packages

文件：1.02386 Mbytes Page：19 Pages

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET??III Power MOSFET in H2PAK-2 and H2PAK-6 packages

文件：1.02386 Mbytes Page：19 Pages

N-channel 40 V, 1.4 m廓 typ., 180 A STripFET III Power MOSFET

文件：1.02386 Mbytes Page：19 Pages

N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220

文件：1.67338 Mbytes Page：21 Pages

N-channel 80 V, 0.0017 typ., 180 A, STripFET VII DeepGATE Power MOSFETs in H2PAK-2, H2PAK-6 and TO-220

文件：1.67338 Mbytes Page：21 Pages

AEC-Q101 qualified

文件：889.21 Kbytes Page：18 Pages

AEC-Q101 qualified

文件：889.21 Kbytes Page：18 Pages

包装：卷带（TR） 描述：MOSFET N-CH 60V H2PAK-2 分立半导体产品 晶体管 - FET，MOSFET - 单个

High avalanche ruggedness

文件：486.89 Kbytes Page：19 Pages

High avalanche ruggedness

文件：486.89 Kbytes Page：19 Pages