Features

• Among the lowest RDS(on) on the market

• Excellent figure of merit (FoM)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

Applications

• Switching applications

Description

These N-channel Power MOSFETs utilize

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low onstate

resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.