Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package

Features • 10 μs of minimum short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Maximum junction temperature: TJ = 175 °C Description This device is an IGBT developed usi

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRENCH GATE FIELD-STOP, 1200 V, 分立半导体产品 晶体管 - UGBT、MOSFET - 单