Features

• 10 μs of minimum short-circuit withstand time

• VCE(sat) = 1.85 V (typ.) @ IC = 15 A

• Tight parameter distribution

• Positive VCE(sat) temperature coefficient

• Low thermal resistance

• Maximum junction temperature: TJ = 175 °C

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

Applications

• Industrial drives

• UPS

• Solar

• Welding