Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 20A 115W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600 V、10 A高速沟槽栅场截止H系列IGBT

Hyperfast Recovery Power Rectifier

The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

Hyperfast Recovery Power Rectifier

The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping rectifiers in a variety of switching power

Fast Recovery Diode

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Hyperfast 2 Rectifier

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