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STGIPS10C60价格

参考价格:¥50.3689

型号:STGIPS10C60 品牌:STMicroelectronics 备注:这里有STGIPS10C60多少钱,2026年最近7天走势,今日出价,今日竞价,STGIPS10C60批发/采购报价,STGIPS10C60行情走势销售排行榜,STGIPS10C60报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STGIPS10C60

SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter 10 A, 600 V short-circuit rugged IGBT

This intelligent power module provides a compact, high performance AC motor drive in a simple, rugged design. Combining ST proprietary control ICs with the most advanced short-circuit-rugged IGBT system technology, this device is ideal for 3-phase inverters in applications such as motor drives and a • IPM 10 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and free-wheeling diodes\n• Short-circuit rugged IGBTs\n• 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull-down / pull-up resistors\n• Undervoltage lockout\n• Internal bootstrap diode\n• Interl;

STMICROELECTRONICS

意法半导体

STGIPS10C60

3-phase inverters for motor drives

文件:623.29 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

STGIPS10C60

封装/外壳:25-PowerDIP 模块(0.993",25.23mm) 包装:散装 描述:MOD IPM SLLIMM 10A 600V 25SDIP 分立半导体产品 功率驱动器模块

STMICROELECTRONICS

意法半导体

SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter 10 A, 600 V short-circuit rugged IGBT

This intelligent power module provides a compact, high performance AC motor drive in a simple, rugged design. Combining ST proprietary control ICs with the most advanced short-circuit-rugged IGBT system technology, this device is ideal for 3-phase inverters in applications such as motor drives and a • IPM 10 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and free-wheeling diodes\n• Short-circuit rugged IGBTs\n• 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull-down / pull-up resistors\n• Undervoltage lockout\n• Internal bootstrap diode\n• Interl;

STMICROELECTRONICS

意法半导体

SLLIMM small low-loss intelligent molded module IPM, 3-phase inverter 10 A, 600 V short-circuit rugged IGBT

This intelligent power module provides a compact, high performance AC motor drive in a simple, rugged design. Combining ST proprietary control ICs with the most advanced short-circuit-rugged IGBT system technology, this device is ideal for 3-phase inverters in applications such as motor drives and a • IPM 30 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and free-wheeling diodes\n• Short-circuit rugged IGBTs\n• 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull-down / pull-up resistors\n• Undervoltage lockout\n• Internal bootstrap diode\n• Interl;

STMICROELECTRONICS

意法半导体

3-phase inverters for motor drives

文件:707.55 Kbytes Page:20 Pages

STMICROELECTRONICS

意法半导体

Undervoltage lockout

文件:635.89 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:25-PowerDIP 模块(0.993",25.23mm) 包装:管件 描述:MOD IPM SLLIMM 3PHASE 25SDIP 分立半导体产品 功率驱动器模块

STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an

MOSPEC

统懋

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an

MOSPEC

统懋

Silicon Controlled Rectifiers

文件:639.18 Kbytes Page:5 Pages

SEMIWELL

矽门微

STGIPS10C60产品属性

  • 类型

    描述

  • Package:

    SDIP-25L

  • Breakdown Voltage_max(V):

    600

  • Collector Current_max(@ Tc=25°C)(A):

    10

  • Current Rating_max:

    20

  • VCE(sat)_typ(@ IC Characterization)(V):

    1.6

  • Switching Frequency_max(kHz):

    20

  • PTOT_nom(W):

    46

  • Topology:

    3-phase inverter

  • Substrate Material:

    DBC

  • Embedded power switches:

    IGBTs

  • Logical Function:

    Negative inputs

  • Other Features:

    Bootstrap diode

  • Protection Option Type:

    Undervoltage lockout

更新时间:2026-5-20 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
25+
N/A
18746
样件支持,可原厂排单订货!
ST(意法半导体)
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ST/意法半导体
25+
SDIP-25
20000
公司只有正品,实单可谈
ST
16
SDIP-25L
528
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
25+
SDIP-25
20000
原装,请咨询
ST/意法半导体
25+
SDIP-25
12700
买原装认准中赛美
ST/意法半导体
25+
SDIP-25
30000
原装正品公司现货,假一赔十!
ST/意法半导体
23+
SDIP-25
8900
全新原装现货
ST
23+
SDIP-25
16900
正规渠道,只有原装!
ST/意法半导体
21+
SDIP-25
8080
只做原装,质量保证

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