| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
S10C60 | SCHOTTKY BARRIER RECTIFIERS(10A,30-60V) SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an | MOSPEC 统懋 |   | |
S10C60 | Schottky Diode | MOSPEC 统懋 | | |
SCHOTTKY BARRIER RECTIFIERS(10A,30-60V) SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an | MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(10A,30-60V) SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an | MOSPEC 统懋 | | ||
Schottky Barrier Rectifiers SchottkyBarrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling | MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(10A,30-60V) SchottkyBarrier Rectifiers Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling an | MOSPEC 统懋 | | ||
Schottky Rectifiers Diodes | CHENMKO 力勤 | | ||
Schottky Rectifiers Diodes | CHENMKO 力勤 | | ||
SCHOTTKY BARRIER RECTIFIER 文件：68.08 Kbytes Page：2 Pages | CHENMKO 力勤 | | ||
Silicon Controlled Rectifiers 文件：639.18 Kbytes Page：5 Pages | SEMIWELL 矽门微 | |
S10C60产品属性
- 类型
描述
- Maximum Average Rectified CurrentIO(mA)：
10000
- Maximum Forward Peak Surge CurrentIFSM(A)：
125
- Maximum Reverse CurrentIR(mA)：
5
- @ IF(mA)：
5000
- Maximum Forward VoltageVF(V)：
0.65
- Package：
TO-220F
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOSPEC |
24+ |
TO-220 |
8150 |
绝对原装现货,价格低,欢迎询购! |
|||
MOSPEC |
17+ |
TO-220 |
6200 |
||||
MOSPEC |
17+ |
TO-220 |
60000 |
保证进口原装可开17%增值税发票 |
|||
MOSPEC |
20+ |
TO-220 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOSPEC |
23+ |
TO-220 |
25000 |
专做原装正品,假一罚百! |
|||
VISHAY |
25+23+ |
SMC |
21891 |
绝对原装正品全新进口深圳现货 |
|||
MOSPEC |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
MOSPEC |
24+ |
TO-220 |
8866 |
||||
PEC |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
mospec |
22+ |
TO- |
6000 |
十年配单,只做原装 |
S10C60芯片相关品牌
S10C60规格书下载地址
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S10C60数据表相关新闻
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2020-10-3
DdatasheetPDF页码索引
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