型号 功能描述 生产厂家 企业 LOGO 操作
STGD7NB60H

N-CHANNEL 7A - 600V - DPAK PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances. The suffix H identifies a family optimized for high frequency applications (up to 50kHz)in ord

STMICROELECTRONICS

意法半导体

STGD7NB60H

N-CHANNEL 7A - 600V - DPAK PowerMESH™ IGBT

STMICROELECTRONICS

意法半导体

N-CHANNEL 7A - 600V IPAK PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix H identifies a family optimized to achieve very low switching times for high frequen

STMICROELECTRONICS

意法半导体

N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with

STMICROELECTRONICS

意法半导体

N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de signed an advanced family of IGBTs, the Power MESH™ IGBTs, with outstanding perfomances. The suffix F identifies a family optimized to achieve very low switching switching times for

STMICROELECTRONICS

意法半导体

N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

文件:341.97 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

文件:341.97 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 7A - 600V - TO-220FP PowerMESH TM IGBT

文件:257.57 Kbytes Page:9 Pages

STMICROELECTRONICS

意法半导体

STGD7NB60H产品属性

  • 类型

    描述

  • 型号

    STGD7NB60H

  • 功能描述

    IGBT 晶体管 N-Ch 600 Volt 7 Amp

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-10-4 14:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
TO252DPAK
22+
6000
十年配单,只做原装
ST
24+
TO252DPAK
8866
ST/意法
24+
TO-252
60000
全新原装现货
ST/意法
24+
TO-252
27950
郑重承诺只做原装进口现货
ST
23+
TO-252
50000
全新原装正品现货,支持订货
STM
24+
TO-252
5000
全新原装正品,现货销售
ST/意法
23+
TO-
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
15+
TO-252
2502
原装
ST/意法
23+
TO-252
50000
全新原装正品现货,支持订货
STM
1709+
TO-252
32500
普通

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