4.5 A, 600 V very fast IGBT with Ultrafast diode

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultrafast soft recovery antiparallel diode Applications Motor drive Description The STGD3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) v

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

4.5 A, 600 V very fast IGBT with Ultrafast diode

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultrafast soft recovery antiparallel diode Applications Motor drive Description The STGD3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) v

4.5 A, 600 V very fast IGBT with Ultrafast diode

文件：925.56 Kbytes Page：16 Pages

4.5 A, 600 V very fast IGBT with Ultrafast diode

文件：925.56 Kbytes Page：16 Pages

4.5 A、600 V超快IGBT，带超高速二极管

3 A, 600 V ultra fast IGBT

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultra fast soft recovery antiparallel diode Applications ■ High frequency inverters ■ Motor drives Description The HF family is based on a new advanced planar technology concept to yield an IGBT with more stable

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re