4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 7.5A TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单

4.5 A, 600 V very fast IGBT with Ultrafast diode

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re

4.5 A, 600 V very fast IGBT with Ultrafast diode

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultrafast soft recovery antiparallel diode Applications Motor drive Description The STGD3HF60HD is based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) v

3 A, 600 V ultra fast IGBT

Features ■ Minimal tail current ■ Low conduction and switching losses ■ Ultra fast soft recovery antiparallel diode Applications ■ High frequency inverters ■ Motor drives Description The HF family is based on a new advanced planar technology concept to yield an IGBT with more stable

4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features  Minimal tail current  Low conduction and switching losses  Ultrafast soft re