Automotive-grade trench gate field-stop 650 V, 200 A, high-efficiency M series IGBT die in D8 packing

Features •AEC-Q101qualified •Low-lossseriesIGBT •LowVCE(sat)=1.52V(typ.)atIC=200A •PositiveVCE(sat)temperaturecoefficient •Tightparameterdistribution •Maximumjunctiontemperature:TJ=175°C Applications •EV/HEVtractioninverters Description Thisdeviceis

Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

Features •AEC-Q101qualified •Low-lossseriesIGBT •LowVCE(sat)=1.55V(typ.)atIC=200A •PositiveVCE(sat)temperaturecoefficient •Tightparameterdistribution •Maximumjunctiontemperature:TJ=175°C •6μsminimumshort-circuitwithstandingtimeatTJ=150C Descriptio

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. ●ESDProtected.

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

Dual P-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing

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包装：散装 描述：SWITCH TOGGLE 开关 拨动开关

包装：散装 描述：SWITCH TOGGLE 开关 拨动开关