Features

• AEC-Q101 qualified

• Low-loss series IGBT

• Low VCE(sat) = 1.52 V (typ.) at IC = 200 A

• Positive VCE(sat) temperature coefficient

• Tight parameter distribution

• Maximum junction temperature: TJ = 175 °C

Applications

• EV/HEV traction inverters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.