Extremelylowgatecharge

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingtheMDmesh™M2technology.Thankstothestriplayoutassociatedtoanimprovedverticalstructure,thedeviceexhibitsbothlowon-resistanceandoptimizedswitchingcharacteristics.Itisthereforesuitableforthemostdemand

N-channel650V,0.91typ.,5A,MDmeshTMM6PowerMOSFETinaTO‑220FPpackage

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Description ThenewMDmeshTMM6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyo

7Amps,650Volts7Amps,650Volts

DESCRIPTION TheUTC7N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

650VN-ChannelPowerMOSFET

Features ●RDS(ON)

7.4Amps,650VoltsN-CHANNELPOWERMOSFET

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