Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 1.15Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N沟道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET，TO-220FP封装

This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high effici • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

Extremely low gate charge

Description This device is an N-channel Power MOSFET developed using the MDmesh™ M2 technology. Thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demand

丝印代码：7N65M2；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem

丝印代码：7N65M2；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem

N-Channel MOSFET uses advanced trench technology

文件：2.091489 Mbytes Page：7 Pages