型号 功能描述 生产厂家&企业 LOGO 操作
7N65

7Amps,650Volts7Amps,650Volts

DESCRIPTION TheUTC7N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
7N65

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
7N65

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
7N65

650VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
7N65

DrainCurrentID=7A@TC=25C

•FEATURES •DrainCurrentID=7A@TC=25℃ •DrainSourceVoltage :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V •AvalancheEnergySpecified •FastSwitching •APPLICATIONS •Highspeedswitchingapplicationsinpowersupplies •PWM

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
7N65

N-CHANNELPOWERMOSFET

■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
7N65

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
7N65

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description 650VN-CHANNELENHANCEMENTMODEPOWERMOSFET Features RDS(ON)=1.27Ω(Max.)@VGS=10V,ID=3.5A Fastswitching 100avalanchetested Improveddv/dtcapability Application DC-DC&DC-ACConverters UninterruptiblePowerSupply(UPS) SwitchModeLowPowerSu

TUOFENGShenzhen Tuofeng Semiconductor Technology Co

拓锋半导体深圳市拓锋半导体科技有限公司

TUOFENG
7N65

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
7N65

N-CHANNELMOSFET

FEATURES RDS(ON)=1.2Ω@VGS=10V Ultralowgatecharge LowreversetransferCapacitance Fastswitchingcapability Avalancheenergytested Improveddv/dtcapability,highruggedness APPLICATIONS Highefciencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge L

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
7N65

650VN-ChannelPowerMOSFET

Features RDS(ON)

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
7N65

650VN-ChannelPlanarMOSFET

Features UltraLowgateCharge LowCrss Fastswitchingcapability

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
7N65

7.4A,650VN-CHANNELPOWERMOSFET

文件:173.56 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
7N65

7.4Amps,650VoltsN-CHANNELPOWERMOSFET

文件:180.91 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A650VN-channelenhancementmodefieldeffecttransistor

7A650VN-channelenhancementmodefieldeffecttransistor Performancecharacteristics: ♦Fastswitchingspeed ♦Lowon-resistance ♦Lowreversetransfercapacitance ♦Lowgatecharge ♦100singlepulseavalancheenergytest ♦Improveddv/dtcapability

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

650VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW

650VN-ChannelEnhancementModeMOSFET

Description TheAP7N65F/PissiliconN-channelEnhanced VDMOSFETs,isobtainedbytheself-alignedplanarTechnology whichreducetheconductionloss,improveswitching performanceandenhancetheavalancheenergy.Thetransistor canbeusedinvariouspowerswitchingcircuitforsystem mini

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A,650VSUPERJUNCTIONMOSPOWERTRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerde

SILANSilan Microelectronics Joint-stock

士兰微杭州士兰微电子股份有限公司

SILAN

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-HCisaN-channelmodepowerMOSFET usingUTC’sadvancedtechnologytoprovidecustomerswith planarstripeandDMOStechnology.Thistechnologyallowsa minimumon-stateresistanceandsuperiorswitching performance.Italsocanwithstandhighenergypulseinthe

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

7.4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

7.4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7N65产品属性

  • 类型

    描述

  • 型号

    7N65

  • 制造商

    UTC-IC

  • 制造商全称

    UTC-IC

  • 功能描述

    7 Amps, 650 Volts 7 Amps, 650 Volts

更新时间:2025-7-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
永铭/MY
24+
NA/
50000
优势代理渠道,原装正品,可全系列订货开增值税票
GOODSEMI
24+
原厂原装正品
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
1948+
TO-251
18562
只做原装正品现货!或订货假一赔十!
KEC
07+
TO220F
1440
只售原装正品
UMW(广东友台半导体)
24+
TO-220F-3
5000
诚信服务,绝对原装原盘。
GOODSEMI
21+
10560
十年专营,原装现货,假一赔十
士兰微
24+
TO-220F
998031
代理原装正品现货低价假一赔十
UTC/友顺
2022+
TO-220F
30000
进口原装现货供应,原装 假一罚十
UTC(友顺)
24+/25+
TO-251
80
UTC原厂一级代理商,价格优势!
UTC/友顺
25+
TO-220F
32000
UTC/友顺全新特价7N65KL-MTQ即刻询购立享优惠#长期有货

7N65芯片相关品牌

  • ABRACON
  • AD
  • BARRY
  • HAMMOND
  • HMSEMI
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

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