7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

Drain Current ID= 7A@ TC=25C

• FEATURES • Drain Current ID= 7A@ TC=25℃ • Drain Source Voltage : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.35Ω (Max) @VGS = 10 V • Avalanche Energy Specified • Fast Switching • APPLICATIONS • High speed switching applications in power supplies • PWM

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

丝印代码：7N65AD；650V N-Channel Planar MOSFET

Description 650V N-Channel Planar MOSFET 7N65 is high voltage MOSFET family based on advanced planar stripe DMOS technology. This advanced MOSFET family has optimized on-state resistance, and also provides superior switching performance and higher avalanche energy strength. This device famil

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

650V N-Channel Power MOSFET

Features RDS(ON)

丝印代码：7N65AD；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

N-CHANNEL POWER MOSFET

■ DESCRIPTION 7N60 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switch

650V N-Channel Power MOSFET

Features ● RDS(ON)

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features  RDS(ON) = 1.27Ω (Max.) @ VGS = 10V, ID = 3.5A  Fast switching  100 avalanche tested  Improved dv/dt capability Application  DC-DC & DC-AC Converters  Uninterruptible Power Supply (UPS)  Switch Mode Low Power Su

N-CHANNEL MOSFET

FEATURES RDS(ON) = 1.2Ω @VGS = 10 V Ultra low gate charge Low reverse transfer Capacitance Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness APPLICATIONS High efciency switch mode power supplies Electronic lamp ballasts based on half bridge L

7.4A, 650V   N-CHANNEL POWER MOSFET

The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching powe • RDS(ON) = 1.2Ω @VGS = 10 V   \n• Ultra low gate charge (typical 29 nC )   \n• Low reverse transfer Capacitance ( CRSS = typical 16pF ) \n• Fast switching capability \n• Avalanche energy tested \n• Improved dv/dt capability, high ruggedness;

7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET

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7.4A, 650V N-CHANNEL POWER MOSFET

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丝印代码：7N65M2；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem

丝印代码：7N65M2；N-channel 650 V, 0.98 廓 typ., 5 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most dem

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RD；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RFJH；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65RMJ；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

丝印代码：7N65FJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65FJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65FJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65FJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65FJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65MJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65MJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65MJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65MJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65MJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65MJD2；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

丝印代码：7N65AT；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

丝印代码：7N65AF；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

丝印代码：7N65AS；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

丝印代码：7N65AS；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

丝印代码：7N65AMJ；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

丝印代码：7N65AD；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability