位置:首页 > IC中文资料第10778页 > 7N65
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
7N65 | 7Amps,650Volts7Amps,650Volts DESCRIPTION TheUTC7N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
7N65 | 7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 | ||
7N65 | N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | ||
7N65 | 650VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | ||
7N65 | DrainCurrentID=7A@TC=25C •FEATURES •DrainCurrentID=7A@TC=25℃ •DrainSourceVoltage :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V •AvalancheEnergySpecified •FastSwitching •APPLICATIONS •Highspeedswitchingapplicationsinpowersupplies •PWM | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
7N65 | N-CHANNELPOWERMOSFET ■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ||
7N65 | N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | ||
7N65 | N-CHANNELENHANCEMENTMODEPOWERMOSFET Description 650VN-CHANNELENHANCEMENTMODEPOWERMOSFET Features RDS(ON)=1.27Ω(Max.)@VGS=10V,ID=3.5A Fastswitching 100avalanchetested Improveddv/dtcapability Application DC-DC&DC-ACConverters UninterruptiblePowerSupply(UPS) SwitchModeLowPowerSu | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | ||
7N65 | N-channelpowerMOStube Features *VDS(V)=650V *RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | ||
7N65 | N-CHANNELMOSFET FEATURES RDS(ON)=1.2Ω@VGS=10V Ultralowgatecharge LowreversetransferCapacitance Fastswitchingcapability Avalancheenergytested Improveddv/dtcapability,highruggedness APPLICATIONS Highefciencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge L | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | ||
7N65 | 650VN-ChannelPowerMOSFET Features RDS(ON) | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | ||
7N65 | 650VN-ChannelPlanarMOSFET Features UltraLowgateCharge LowCrss Fastswitchingcapability | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | ||
7N65 | 7.4A,650VN-CHANNELPOWERMOSFET 文件:173.56 Kbytes Page:6 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
7N65 | 7.4Amps,650VoltsN-CHANNELPOWERMOSFET 文件:180.91 Kbytes Page:6 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A650VN-channelenhancementmodefieldeffecttransistor 7A650VN-channelenhancementmodefieldeffecttransistor Performancecharacteristics: ♦Fastswitchingspeed ♦Lowon-resistance ♦Lowreversetransfercapacitance ♦Lowgatecharge ♦100singlepulseavalancheenergytest ♦Improveddv/dtcapability | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 | |||
650VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 | |||
N-channelpowerMOStube Features *VDS(V)=650V *RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | |||
650VN-ChannelEnhancementModeMOSFET Description TheAP7N65F/PissiliconN-channelEnhanced VDMOSFETs,isobtainedbytheself-alignedplanarTechnology whichreducetheconductionloss,improveswitching performanceandenhancetheavalancheenergy.Thetransistor canbeusedinvariouspowerswitchingcircuitforsystem mini | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 | |||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7A,650VSUPERJUNCTIONMOSPOWERTRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerde | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | |||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-MisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-RisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司 | |||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65-HCisaN-channelmodepowerMOSFET usingUTC’sadvancedtechnologytoprovidecustomerswith planarstripeandDMOStechnology.Thistechnologyallowsa minimumon-stateresistanceandsuperiorswitching performance.Italsocanwithstandhighenergypulseinthe | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
7.4A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
7.4A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7.4A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
7.4A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |
7N65产品属性
- 类型
描述
- 型号
7N65
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
7 Amps, 650 Volts 7 Amps, 650 Volts
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
永铭/MY |
24+ |
NA/ |
50000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
GOODSEMI |
24+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
1948+ |
TO-251 |
18562 |
只做原装正品现货!或订货假一赔十! |
||||
KEC |
07+ |
TO220F |
1440 |
只售原装正品 |
|||
UMW(广东友台半导体) |
24+ |
TO-220F-3 |
5000 |
诚信服务,绝对原装原盘。 |
|||
GOODSEMI |
21+ |
10560 |
十年专营,原装现货,假一赔十 |
||||
士兰微 |
24+ |
TO-220F |
998031 |
代理原装正品现货低价假一赔十 |
|||
UTC/友顺 |
2022+ |
TO-220F |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
UTC(友顺) |
24+/25+ |
TO-251 |
80 |
UTC原厂一级代理商,价格优势! |
|||
UTC/友顺 |
25+ |
TO-220F |
32000 |
UTC/友顺全新特价7N65KL-MTQ即刻询购立享优惠#长期有货 |
7N65规格书下载地址
7N65参数引脚图相关
- 9018
- 9014
- 9012
- 9001
- 8位移位寄存器
- 89c51
- 89c2051
- 88e6060
- 8550
- 8510c
- 8486
- 8390
- 8255
- 822j
- 8171
- 815ept
- 8100c
- 8051
- 8024
- 7号电池
- 7N70_11
- 7N65Z
- 7N65T
- 7N65-R
- 7N65P
- 7N65-M
- 7N65LL-TA3-T
- 7N65LL
- 7N65LG-TF3-T
- 7N65LG-TF2-T
- 7N65LG-TA3-T
- 7N65L
- 7N65KL
- 7N65K
- 7N65H
- 7N65G-TQ2-T
- 7N65G-TQ2-R
- 7N65G-TF3-T
- 7N65G-TF2-T
- 7N65G-TF1-T
- 7N65G-TA3-T
- 7N65G
- 7N65-F
- 7N65F
- 7N65D
- 7N65B
- 7N65AL-TF3-T
- 7N65AL-TF1-T
- 7N65AL-TA3-T
- 7N65AG-TF3-T
- 7N65AG-TF1-T
- 7N65AG-TA3-T
- 7N65A
- 7N65_15
- 7N65_12
- 7N65_09
- 7N60ZL-X-TQ2-T
- 7N60ZL-X-TQ2-R
- 7N60ZL-X-TA3-T
- 7N60ZL-TA3-T
- 7N60ZG-X-TQ2-T
- 7N60ZG-X-TQ2-R
- 7N60ZG-X-TA3-T
- 7N60ZG-TQ2-T
- 7N60ZG-TQ2-R
- 7N60ZG-TA3-T
- 7N60Z_11
- 7N60Z_10
- 7N60Z
- 7N60U
- 7N60-TF3-T
- 7N60-TA3-T
- 7N60T
- 7N60-R
- 7N60-Q
- 7N60P
- 7N60M2
- 7N60-M
- 7N60L-X-TQ2-T
- 7N60L-X-TQ2-R
- 7N60L-X-TF3-T
- 7N60L-X-TF1-T
- 7N60L-X-TA3-T
- 7N60L
- 7N60K
- 7N60H
- 7N60G
- 7N60-F
- 7N60F
- 7N60D
- 7N60B
- 7N60A4
- 7N60A
- 7N60_15
- 7N60_12
7N65数据表相关新闻
7N65L-TO220F1T-TGML_UTC代理商
7N65L-TO220F1T-TGML_UTC代理商
2023-2-27N65
7N65,N沟道高级功率MOSFET
2022-6-57MBP25VFN120-50
原装现货
2020-11-177MB140N-120
7MB140N-120,全新原装当天发货或门市自取0755-82732291.
2020-6-217N65KL-TF1-T
联系人:陈先生电话:18018738768(微信同号) QQ:1005525513 我司有一手货源,价优,可以长期提供大量,优质的货源,专业的渠道,物美价廉是公司与客户之间共同的理念 由于公司型号众多,无法一一上传,如在网站找不到您要的产品,请联系业务员,本司可提供电子元器件配单服务 我司部分现货库存如下: HR911163A
2020-4-157MBP75KB060
7MBP75KB060,全新原装当天发货或门市自取0755-82732291.
2019-10-16
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102