Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. • Extremely low gate charge • Ultra low on-resistance • Low gate input resistance A

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting

N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Powe

N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package

Features  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET with very low RDS(on) in all packages.

N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a DPAK package

Features • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100 avalanche tested • Zener-protected Applications • Flyback converter • Adapters for tablets, notebook and AIO • LED lighting Description This very high voltage N-channel Power MO

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

STD

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Flexible MPEG audio/video codec with DVD and DVB receiver capability

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Flexible MPEG audio/video codec with DVD and DVB receiver capability

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Isc N-Channel MOSFET Transistor

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N-Channel 100-V (D-S) MOSFET

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N沟道100 V、0.0085 Ohm典型值、70 A STripFET F7功率MOSFET，DPAK封装

N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a DPAK package

N沟道30 V、2 mOhm典型值、120 A STripFET H6功率MOSFET，DPAK封装

N-channel 40 V, 5.5 m typ., 80 A STripFET VI DeepGATE Power MOSFET in DPAK

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N-Channel MOSFET uses advanced trench technology

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Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a DPAK package

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N-Channel MOSFET uses advanced SGT technology

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N-Channel 60 V (D-S) 175 째C MOSFET

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