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STD13003价格

参考价格:¥1.6181

型号:STD13003T4 品牌:STMicroelectronics 备注:这里有STD13003多少钱,2026年最近7天走势,今日出价,今日竞价,STD13003批发/采购报价,STD13003行情走势销售排行榜,STD13003报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STD13003

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

STD13003

NPN Silicon Power Transistor

Features •High speed switching •VCEO(sus)=400V •Suitable for Switching Regulator and Motor Control

AUK

STD13003

NPN Silicon Power Transistor

Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control

AUK

STD13003

NPN Silicon Power Transistor

•High speed switching \n•VCEO(sus)=400V\n•Suitable for Switching Regulator and Motor Control;

ALD

STD13003

高压快速切换NPN功率晶体管

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. \n\n It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. \n\n The device is designed fo • THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix \\\"-1\\\") \n• SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix \\\"T4\\\") \n• REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES \n• LOW SPREAD OF DYNAMIC PARAMETERS \n• MEDIUM VOLTAGE CAPABILITY \n• VE;

STMICROELECTRONICS

意法半导体

STD13003

NPN Silicon Power Transistor

AUK

NPN Silicon Power Transistor

Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control Applications • Power amplifier application • High current switching application

KODENSHI

可天士

NPN Silicon Power Transistor

SWITCHING REGULATOR APPLICATIONS Features •High speed switching •VCEO(sus)=400V •Suitable for Switching Regulator and Motor Control

KODENSHI

可天士

NPN Silicon Power Transistor

Features •High speed switching •VCEO(sus)=400V •Suitable for Switching Regulator and Motor Control

AUK

NPN Silicon Power Transistor

Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control

AUK

SWITCHING REGULATOR APPLICATIONS

SWITCHING REGULATOR APPLICATIONS Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control

KODENSHI

可天士

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS NPN 400V 1.5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

STD13003产品属性

  • 类型

    描述

  • Marketing Status:

    Active

  • Grade:

    Industrial

  • Transistor Polarity:

    NPN

  • Collector-Emitter Voltage_max(V):

    400

  • Collector-Base Voltage_max(V):

    700

  • Collector Current_abs_max(A):

    1.5

  • Dc Current Gain_min:

    5

  • Dc Current Gain_max:

    25

  • Test Condition for hFE (IC):

    1

  • Test Condition for hFE (VCE)_spec(V):

    2

  • VCE(sat)_max(V):

    1

  • Test Condition for VCE(sat) - IC:

    1

  • Test Condition for VCE(sat) - IB_spec(mA):

    250

更新时间:2026-5-14 10:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST专家
23+24
DPAK
59340
原装正品,原盘原标,优势库存
ST/意法
2023+
TO220
6893
十五年行业诚信经营,专注全新正品
ST(意法半导体)
24+
TO-252
2669
原厂订货渠道,支持BOM配单一站式服务
STMICRO
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
24+
TO-252
39500
进口原装现货 支持实单价优
ST/意法
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
ST
25+
TO-252
90000
一级代理商进口原装现货、假一罚十价格合理
ST
24+
TO-252
5000
只做原装公司现货
AUK
24+
TO92
22055
郑重承诺只做原装进口现货

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