位置:首页 > IC中文资料 > STD13003

STD13003价格

参考价格:¥1.6181

型号:STD13003T4 品牌:STMicroelectronics 备注:这里有STD13003多少钱,2026年最近7天走势,今日出价,今日竞价,STD13003批发/采购报价,STD13003行情走势销售排行榜,STD13003报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STD13003

NPN Silicon Power Transistor

Features •High speed switching •VCEO(sus)=400V •Suitable for Switching Regulator and Motor Control

AUK

STD13003

NPN Silicon Power Transistor

Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control

AUK

STD13003

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

STD13003

NPN Silicon Power Transistor

•High speed switching \n•VCEO(sus)=400V\n•Suitable for Switching Regulator and Motor Control;

ALD

STD13003

高压快速切换NPN功率晶体管

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. \n\n It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. \n\n The device is designed fo • THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix \\\"-1\\\") \n• SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix \\\"T4\\\") \n• REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES \n• LOW SPREAD OF DYNAMIC PARAMETERS \n• MEDIUM VOLTAGE CAPABILITY \n• VE;

STMICROELECTRONICS

意法半导体

STD13003

NPN Silicon Power Transistor

AUK

NPN Silicon Power Transistor

Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control Applications • Power amplifier application • High current switching application

KODENSHI

可天士

NPN Silicon Power Transistor

SWITCHING REGULATOR APPLICATIONS Features •High speed switching •VCEO(sus)=400V •Suitable for Switching Regulator and Motor Control

KODENSHI

可天士

NPN Silicon Power Transistor

Features •High speed switching •VCEO(sus)=400V •Suitable for Switching Regulator and Motor Control

AUK

NPN Silicon Power Transistor

Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control

AUK

SWITCHING REGULATOR APPLICATIONS

SWITCHING REGULATOR APPLICATIONS Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control

KODENSHI

可天士

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR) 描述:TRANS NPN 400V 1.5A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

STD13003产品属性

  • 类型

    描述

  • Marketing Status:

    Active

  • Grade:

    Industrial

  • Transistor Polarity:

    NPN

  • Collector-Emitter Voltage_max(V):

    400

  • Collector-Base Voltage_max(V):

    700

  • Collector Current_abs_max(A):

    1.5

  • Dc Current Gain_min:

    5

  • Dc Current Gain_max:

    25

  • Test Condition for hFE (IC):

    1

  • Test Condition for hFE (VCE)_spec(V):

    2

  • VCE(sat)_max(V):

    1

  • Test Condition for VCE(sat) - IC:

    1

  • Test Condition for VCE(sat) - IB_spec(mA):

    250

更新时间:2026-7-23 12:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2020+
TO-252
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
2023+
TO252
5800
进口原装,现货热卖
ST(意法)
2511
TO-252-2(DPAK)
9550
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ST/意法
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
ST
23+
TO-252
14550
原厂原装正品
AUK
23+
TO-92
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ST
25+
DPAK
12880
原装,诚信经营
ST
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
ST/意法半导体
26+
原厂封装
10280

STD13003数据表相关新闻

  • STD15P6F6AG

    进口代理

    2023-5-10
  • STD105N10F7AG

    全新原装现货 支持第三方机构验证

    2022-6-23
  • STD120N4F6 瑞智芯 只有原装

    深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:STD120N4F6 类别 分立半导体产品 晶体管 - FET,MOSFET - 单个 制造商 STMicroelectronics 包装:2500 封装:TO-252-3

    2021-9-18
  • STD110N8F6

    製造商: STMicroelectronics 產品類型: MOSFET 技術: Si 安裝風格: SMD/SMT 封裝/外殼: TO-252-3 晶體管極性: N-Channel 通道數: 1 Channel Vds - 漏-源擊穿電壓: 80 V Id - C連續漏極電流: 80 A Rds On - 漏-源電阻: 6.5 mOhms Vgs - 閘極-源極電壓: - 20 V, + 20 V Vgs th - 門源門限電壓 : 4.5 V

    2021-6-9
  • STD13NM60N原装现货

    瀚佳科技(深圳)有限公司 专业进口电子元器件代理商

    2020-8-17
  • STD150NH02LT4原装现货

    瀚佳科技(深圳)有限公司 专业进口电子元器件代理商

    2020-8-17