| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD13003D | NPN Silicon Power Transistor Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control Applications • Power amplifier application • High current switching application | KODENSHI 可天士 |   | |
STD13003D | Power Transistors | AUK | | |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
STD13003D产品属性
- 类型
描述
- Classifacation：
Single type
- VCEO [V]：
400
- IC[A]：
1.5
- PC[W]：
1.2
- hFE_Min：
15
- hFE_Max：
35
- hFE@ VCE [V]：
2
- hFE@ IC[A]：
0.5
- VCE(sat) [V]_Max：
0.5
- VCE(sat) [V]@ IC[A]：
0.5
- VCE(sat) [V]@ IB[A]：
0.1
- fT[MHz]_Typ：
4
- fT[MHz]@ VCE [V]：
10
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
2447 |
TO-252-2(DPAK) |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
KODENSHIAUK |
25+ |
HALOGENFREE |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
24+ |
TO-252-3 |
65300 |
一级代理/放心采购 |
|||
AUK |
24+ |
TO92 |
22055 |
郑重承诺只做原装进口现货 |
|||
ST |
25+23+ |
TO-252 |
16749 |
绝对原装正品全新进口深圳现货 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法 |
22+ |
TO-252-3 |
12245 |
现货,原厂原装假一罚十! |
|||
ST/意法 |
21+ |
TO220 |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
ST/意法 |
24+ |
DPAK |
3800 |
大批量供应优势库存热卖 |
|||
ST专家 |
20+ |
DPAK |
69052 |
原装优势主营型号-可开原型号增税票 |
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STD13003D规格书下载地址
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STD13003D数据表相关新闻
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
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