Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Silicon Diffused Power Transistor

NPN power transistor

General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. Features and benefits • Fast switching • High voltage capability • Very low switching and conduction losses Applications • Compact fluorescent lamps (CFL) • El

Silicon diffused power transistor

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

NPN power transistor

NPN power transistor

General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. Features and benefits • Fast switching • High typical DC current gain • High voltage capability of 700 V • Very low switching and conduction losses Applications

High voltage bipolar transistors for lighting, SMPS and industrial applications

High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. • Fast switching\n• High typical DC current gain\n• High voltage capability of 700 V\n• Very low switching and conduction losses;

NPN power transistor

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN power transistor

文件：157 Kbytes Page：12 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 1.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN power transistor

文件：179.62 Kbytes Page：10 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt