STX13003价格
参考价格：￥1.0114
型号：STX13003 品牌：STMicroelectronics 备注：这里有STX13003多少钱，2026年最近7天走势，今日出价，今日竞价，STX13003批发/采购报价，STX13003行情走势销售排行榜，STX13003报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STX13003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 |   | |
STX13003 | High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | |
STX13003 | AC-DC PWM CONTROLLER PRIMARY SWITCHING REGULATORS DESCRIPTION The AP8010 is a high performance AC-DC off‐line controller for low power battery charger and adapter applications with Universal‐input. It uses Pulse Frequency and Width Modulation (PFWM) method to build discontinuous conduction mode (DCM) flyback power supplies. The AP8010 util | AITSEMI 创瑞科技 | | |
STX13003 | 高压快速切换NPN功率晶体管 The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Very high switching speed; | STMICROELECTRONICS 意法半导体 | | |
STX13003 | 封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 400V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | |
STX13003产品属性
- 类型
描述
- Marketing Status：
Active
- Grade：
Industrial
- Transistor Polarity：
NPN
- Collector-Emitter Voltage_max(V)：
400
- Collector-Base Voltage_max(V)：
700
- Collector Current_max(A)：
1
- Dc Current Gain_min：
5
- Dc Current Gain_max：
25
- Test Condition for hFE (IC)：
1
- Test Condition for hFE (VCE)_spec(V)：
2
- VCE(sat)_max(V)：
1
- Test Condition for VCE(sat) - IC：
1
- Test Condition for VCE(sat) - IB_spec(mA)：
250
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
25+ |
N/A |
11491 |
样件支持,可原厂排单订货! |
|||
ST(意法半导体) |
25+ |
N/A |
11543 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST/意法 |
25+ |
TO-92 |
32360 |
ST/意法全新特价STX13003G-AP即刻询购立享优惠#长期有货 |
|||
ST |
92 |
1649+1705+ |
11300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STM |
22+ |
SMD |
30000 |
只做原装正品 |
|||
ST |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST |
25+ |
TO-92 |
40000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST/意法 |
24+ |
N/A |
5000 |
原装分货 强势渠道 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
26+ |
TO-92 |
60000 |
只有原装 可配单 |
STX13003规格书下载地址
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DdatasheetPDF页码索引
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