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STD13003Q

NPN Silicon Power Transistor

Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control

AUK

STD13003Q

SWITCHING REGULATOR APPLICATIONS

SWITCHING REGULATOR APPLICATIONS Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control

KODENSHI

可天士

STD13003Q

NPN Silicon Power Transistor

• High speed switching\n• VCEO(sus)=400V\n• Suitable for Switching Regulator and Motor Control ;

ALD

STD13003Q

Power Transistors

AUK

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

STD13003Q产品属性

  • 类型

    描述

  • Classifacation:

    Single type

  • VCEO [V]:

    400

  • IC[A]:

    1.5

  • hFE_Min:

    8

  • hFE_Max:

    40

  • hFE@ VCE [V]:

    0.5

  • hFE@ IC[A]:

    2

  • VCE(sat) [V]_Max:

    0.5

  • VCE(sat) [V]@ IC[A]:

    0.5

  • VCE(sat) [V]@ IB[A]:

    0.1

  • fT[MHz]_Min:

    4

  • fT[MHz]@ VCE [V]:

    10

更新时间:2026-7-23 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
25+
DIP
20000
原装,请咨询
SANKEN
25+
TO3P-5Pin
880000
明嘉莱只做原装正品现货
三肯
22+
TO-3P-5L
20000
公司只做原装 品质保障
AUK
24+
TO92
22055
郑重承诺只做原装进口现货
三肯
24+
TO-3P-5L
5000
全新原装正品,现货销售
24+
SMD
93
本站现库存
AUK
23+
TO-92
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
三肯
24+
TO-3P-5L
25836
新到现货,只做全新原装正品
ST
25+
DIP
20000
原装
三肯
14+
TO-3P-5L
40
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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