STB11NM60价格

参考价格:¥10.6340

型号:STB11NM60-1 品牌:STMICROELECTRONICS 备注:这里有STB11NM60多少钱,2025年最近7天走势,今日出价,今日竞价,STB11NM60批发/采购报价,STB11NM60行情走势销售排行榜,STB11NM60报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STB11NM60

N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

STMICROELECTRONICS

意法半导体

STB11NM60

N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

文件:364.29 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

STB11NM60

isc N-Channel Mosfet Transistor

文件:312.31 Kbytes Page:2 Pages

ISC

无锡固电

STB11NM60

Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK Tube

ETC

知名厂家

N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?줡ower MOSFET

Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt. The adoption of the Company’s proprietary strip techniq

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

Isc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

文件:364.29 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件:356.94 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

文件:1.040089 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

文件:357.14 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

文件:357.14 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

文件:623.95 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件:312.51 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel Mosfet Transistor

文件:357.17 Kbytes Page:2 Pages

ISC

无锡固电

MOSFET N-CH 600V 10A I2PAK

STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

文件:623.95 Kbytes Page:21 Pages

STMICROELECTRONICS

意法半导体

N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

文件:364.29 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.4 Ohm典型值、11 A MDmesh功率MOSFET,D2PAK封装

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

STMICROELECTRONICS

意法半导体

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.032609 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

文件:357.14 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

STB11NM60产品属性

  • 类型

    描述

  • 型号

    STB11NM60

  • 制造商

    STMicroelectronics

  • 功能描述

    MOSFET N-Channel 600V 11A D2PAK

更新时间:2025-11-21 17:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
ST/意法半导体
23+
TO-263-3
12820
正规渠道,只有原装!
ST
2511
TO-262
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法
08+
TO-263
55
ST专家
D2PAK
23500
一级代理 原装正品假一罚十价格优势长期供货
ST/意法半导体
21+
TO-263-3
8860
原装现货,实单价优
ST
25+
TO-263
4500
全新原装、诚信经营、公司现货销售!
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST(意法)
24+
N/A
22048
原厂可订货,技术支持,直接渠道。可签保供合同
FAIRCHILD
NEW
TO-220F
9526
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订

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