位置：STB11NM60N > STB11NM60N详情
STB11NM60N中文资料
| 厂家型号 | STB11NM60N |
| 文件大小 | 641.21Kbytes |
| 页面数量 | 20页 |
| 功能描述 | N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET |
| 数据手册 | |
| 生产厂商 | STMICROELECTRONICS |
STB11NM60N数据手册规格书PDF详情
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
STB11NM60N产品属性
- 类型
描述
- 型号
STB11NM60N
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
ST |
23+ |
TO263 |
6996 |
只做原装正品现货 |
|||
ST全系列 |
25+23+ |
I2PAK |
26772 |
绝对原装正品全新进口深圳现货 |
|||
ST |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
08+ |
TO-262 |
20 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
TO-262 |
2520 |
原厂原装正品 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST |
17+ |
I2PAK |
6200 |
||||
ST |
20+ |
TO-262 |
38560 |
原装优势主营型号-可开原型号增税票 |
STB11NM60N 资料下载更多...
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STMICROELECTRONICS相关芯片制造商
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