位置：首页 > IC中文资料第12672页 > SST29EE512
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST29EE512 | 512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc |   | |
SST29EE512 | 512 Kbit (64K x8) Page-Mode EEPROM | SST Silicon Storage Technology, Inc | | |
SST29EE512 | 512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | |
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x 8) page-mode EEPROM | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
64K X 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase ope | WINBOND 华邦电子 | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：871.45 Kbytes Page：23 Pages | GREENLIANT 绿芯半导体 | |
SST29EE512产品属性
- 类型
描述
- 型号
SST29EE512
- 制造商
SST
- 制造商全称
Silicon Storage Technology, Inc
- 功能描述
512 Kbit(64K x8) Page-Write EEPROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
2016+ |
PLCC32 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SST |
23+ |
TSOP32 |
20000 |
全新原装假一赔十 |
|||
SST |
TSOP32 |
6098 |
全新原装进口自己库存优势 |
||||
SST |
25+ |
DIP32 |
500000 |
行业低价,代理渠道 |
|||
SST |
PLCC-32 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SST |
23+ |
TSSOP |
65480 |
||||
SST出售 |
23+ |
PLCC |
3000 |
原装正品假一罚百!可开增票! |
|||
SST |
24+ |
PLCC |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SST |
05+ |
原厂原装 |
1779 |
只做全新原装真实现货供应 |
|||
SST |
25+ |
PLCC |
3000 |
全新原装、诚信经营、公司现货销售! |
SST29EE512规格书下载地址
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- SST29EE020-120-4C-WH
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- SST29EE020-120-4C-PH
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2019-8-29
DdatasheetPDF页码索引
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