位置：首页 > IC中文资料第1517页 > SST29EE512-70-4C-NHE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST29EE512-70-4C-NHE | 512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc |   | |
SST29EE512-70-4C-NHE | 512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | |
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | |
SST29EE512-70-4C-NHE产品属性
- 类型
描述
- 型号
SST29EE512-70-4C-NHE
- 功能描述
闪存 64K X 8 70ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
NA/ |
39 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SST |
25+ |
DIP |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
SST |
24+ |
PLCC32 |
35400 |
全新原装现货/假一罚百! |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
SST |
2447 |
PLCC32 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SST |
10+ |
TSOP |
1070 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
24+ |
PLCC32 |
6000 |
只做原装，欢迎询价，量大价优 |
|||
SST |
2022+ |
PLCC32 |
7500 |
原厂代理 终端免费提供样品 |
|||
SST |
24+ |
PLCC |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
SST |
24+ |
6868 |
原装现货,可开13%税票 |
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SST29EE512-70-4C-NHE规格书下载地址
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2019-8-29
DdatasheetPDF页码索引
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