位置：首页 > IC中文资料第1321页 > SST29EE512-70-4I-NH
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST29EE512-70-4I-NH | 512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc |   | |
SST29EE512-70-4I-NH | 512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | |
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | |
SST29EE512-70-4I-NH产品属性
- 类型
描述
- 型号
SST29EE512-70-4I-NH
- 功能描述
闪存 64K X 8 70ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
|||
SST |
05+ |
原厂原装 |
1779 |
只做全新原装真实现货供应 |
|||
SST |
2021+ |
60000 |
原装现货，欢迎询价 |
||||
SST |
24+ |
DIP32 |
10500 |
全新原装正品现货假一罚十 |
|||
SST |
24+ |
PLCC |
5000 |
只做原装公司现货 |
|||
SST |
新年份 |
PLCC |
3500 |
绝对全新原装现货,欢迎来电查询 |
|||
SST |
PLCC |
835 |
正品原装--自家现货-实单可谈 |
||||
SST |
24+ |
2000 |
本站现库存 |
||||
SST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
SST |
21+ |
PLCC |
10000 |
原装现货假一罚十 |
SST29EE512-70-4I-NH芯片相关品牌
SST29EE512-70-4I-NH规格书下载地址
SST29EE512-70-4I-NH参数引脚图相关
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- t680
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- SST404
- SST403
- SST402
- SST401
- SST3S-C
- SST3I-C
- SST3906
- SST3904
- SST390
- SST375
- SST3585
- SST3215
- SST310
- SST309
- SST308
- SST30
- SST3.5
- SST2S-C
- SST2I-C
- SST2H-D
- SST29EF010-150-4I-EH
- SST29EF010-150-4C-WH
- SST29EF010-150-4C-PH
- SST29EF010-150-4C-NH
- SST29EF010-150-4C-EH
- SST29EF010-120-4I-WH
- SST29EF010-120-4I-PH
- SST29EF010-120-4I-NH
- SST29EF010-120-4I-EH
- SST29EE512-90-4I-WH
- SST29EE512-90-4I-UH
- SST29EE512-90-4I-PH
- SST29EE512-90-4I-NH
- SST29EE512-90-4I-EH
- SST29EE512-90-4C-WH
- SST29EE512-90-4C-UH
- SST29EE512-90-4C-PH
- SST29EE512-90-4C-NH
- SST29EE512-90-4C-EH
- SST29EE512-70-4I-NHE
- SST29EE512-70-4I-EHE
- SST29EE512-70-4I-EH
- SST29EE512-70-4C-PHE
- SST29EE512704CPHE
- SST29EE512-70-4C-PH
- SST29EE512-70-4C-NHE-T
- SST29EE512-70-4C-NHE
- SST29EE512704CNHE
- SST29EE512-70-4C-NH
- SST29EE512-70-4C-EHE
- SST29EE512704CEHE
- SST29EE512-70-4C-EH
- SST29EE512-150-4I-WH
- SST29EE512-150-4I-UH
- SST29EE512-150-4I-PH
- SST29EE512-150-4I-NH
- SST29EE512-150-4I-EH
- SST29EE512-150-4C-WH
- SST29EE512-150-4C-UH
- SST29EE512-150-4C-PH
- SST271
- SST270
- SST2630
- SST2625
- SST2623
- SST2622
- SST2610
- SST2605
- SST2604
- SST2603
- SST2602
- SST240
- SST215
- SST214
- SST213
- SST211
- SST2100
- SST210
- SST204
- SST203
SST29EE512-70-4I-NH数据表相关新闻
SST25WF040B-40I/SN
SST25WF040B-40I/SN
2023-3-28SST26VF016BT-80E/SM
SST26VF016BT-80E/SM
2022-8-12SST26VF016BT-80E/MF
SST26VF016BT-80E/MF
2022-8-12SST39VF1601-70-4I-EKE
www.58chip.com
2022-5-9SST39VF040-70-4C-NHE
2 Gbit NOR闪存 , Parallel 8 bit NOR闪存 , 32 bit NOR闪存 , DFN-8 NOR闪存 , 128 Mbit SMD/SMT 2 V 1.65 V NOR闪存 , 128 Mbit SPI NOR Flash 1.65 V NOR闪存
2020-7-8SST34HF1641J-70-4E-L1PE拓亿芯电子代理原装现货
SST34HF1641J-70-4E-L1PE 拓亿芯电子 刘先生 0755-82777855 qq 1774550803
2019-8-29
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
