型号 功能描述 生产厂家&企业 LOGO 操作
SST29EE512-70-4I-NH

512 Kbit (64K x8) Page-Write EEPROM

PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NH

512 Kbit (64K x8) Page-Write EEPROM

文件:423.31 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

512 Kbit (64K x8) Page-Write EEPROM

PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro

SST

Silicon Storage Technology, Inc

512 Kbit (64K x8) Page-Write EEPROM

文件:423.31 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

512 Kbit (64K x8) Page-Write EEPROM

PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro

SST

Silicon Storage Technology, Inc

512 Kbit (64K x8) Page-Write EEPROM

PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro

SST

Silicon Storage Technology, Inc

512 Kbit (64K x8) Page-Write EEPROM

PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro

SST

Silicon Storage Technology, Inc

512 Kbit (64K x8) Page-Write EEPROM

文件:423.31 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

512 Kbit (64K x8) Page-Write EEPROM

文件:423.31 Kbytes Page:26 Pages

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NH产品属性

  • 类型

    描述

  • 型号

    SST29EE512-70-4I-NH

  • 功能描述

    闪存 64K X 8 70ns

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-8-17 11:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SST
24+
DIP32
10500
全新原装正品现货假一罚十
SST
23+
IC
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SST
2447
TSOP32
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SST
23+
PLCC
50000
全新原装正品现货,支持订货
SST
2021+
60000
原装现货,欢迎询价
SST
PLCC
835
正品原装--自家现货-实单可谈
SST
24+
2000
本站现库存
SST
22+
原厂原封
8000
原装现货库存.价格优势
SST
22+
TSSOP
3000
原装正品,支持实单
SST
1824+
PLCC
2705
原装现货专业代理,可以代拷程序

SST29EE512-70-4I-NH芯片相关品牌

SST29EE512-70-4I-NH数据表相关新闻