位置：首页 > IC中文资料第1274页 > SST29EE512-70-4I-NHE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SST29EE512-70-4I-NHE | 512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc |   | |
SST29EE512-70-4I-NHE | 512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | |
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM PRODUCT DESCRIPTION The SST29EE/LE/VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The splitgate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate appro | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | | ||
512 Kbit (64K x8) Page-Write EEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology, Inc | |
SST29EE512-70-4I-NHE产品属性
- 类型
描述
- 型号
SST29EE512-70-4I-NHE
- 功能描述
闪存 64K X 8 70ns
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
24+ |
NA/ |
463 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SST |
2016+ |
PLCC |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SST |
23+ |
TSOP32 |
20000 |
全新原装假一赔十 |
|||
SST |
24+ |
IC |
990000 |
明嘉莱只做原装正品现货 |
|||
SST |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SST |
22+ |
TSSOP |
3000 |
原装正品,支持实单 |
|||
SST |
25+ |
PLCC |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
SST |
PLCC |
835 |
正品原装--自家现货-实单可谈 |
||||
SST |
24+ |
DIP32 |
10500 |
全新原装正品现货假一罚十 |
|||
SST |
24+ |
2000 |
本站现库存 |
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SST29EE512-70-4I-NHE规格书下载地址
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2019-8-29
DdatasheetPDF页码索引
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