位置：首页 > IC中文资料第5833页 > W29EE512
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
W29EE512 | 64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 |  |   |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
64KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE512isa512Kbit,5-voltonlyCMOSflashmemoryorganizedas64K´8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE512resultsinfastprogram/eraseope | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro | SST Silicon Storage Technology，Inc. |  | | |
512Kbit(64Kx8)Page-WriteEEPROM PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro | SST Silicon Storage Technology，Inc. | | | |
512Kbit(64Kx8)Page-WriteEEPROM 文件：871.45 Kbytes Page：23 Pages | GreenliantGreenliantsystems,LTD 绿芯 |  | | |
512Kbit(64Kx8)Page-WriteEEPROM 文件：423.31 Kbytes Page：26 Pages | SST Silicon Storage Technology，Inc. | | |
W29EE512产品属性
- 类型
描述
- 型号
W29EE512
- 制造商
WINBOND
- 制造商全称
Winbond
- 功能描述
64K X 8 CMOS FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WINBOND |
2016+ |
PLCC32 |
5580 |
只做原装,假一罚十,内存,闪存,公司可开17%增值税 |
|||
WINBOWD |
20+ |
PLCC |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
WINBOND |
21+ |
TSSOP |
5000 |
原装现货。假一赔十 |
|||
winbond |
1926+ |
TSSOP |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
WINBOND |
23+ |
PLCC |
1857 |
特价库存 |
|||
WINBOND |
23+ |
TSOP32 |
6000 |
原装正品，支持实单 |
|||
WINBONB |
23+ |
PLCC |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
WB |
20+ |
TSOP32 |
2960 |
诚信交易大量库存现货 |
|||
WINBOND/华邦 |
2048+ |
PLCC32 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
SST |
2020+ |
PLCC |
350000 |
100%进口原装正品公司现货库存 |
W29EE512芯片相关品牌
W29EE512规格书下载地址
W29EE512参数引脚图相关
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