丝印代码：SPN80N10；N-Channel Enhancement Mode MOSFET

文件：464.57 Kbytes Page：7 Pages

丝印代码：SPN80N10；N-Channel Enhancement Mode MOSFET

文件：464.57 Kbytes Page：7 Pages

丝印代码：SPN80N10；N-Channel Enhancement Mode MOSFET

文件：464.57 Kbytes Page：7 Pages

丝印代码：SPN80N10；N-Channel Enhancement Mode MOSFET

文件：464.57 Kbytes Page：7 Pages

丝印代码：SPN80N10；N-Channel Enhancement Mode MOSFET

文件：464.57 Kbytes Page：7 Pages

SR MOS

N-Channel Enhancement Mode MOSFET

HiPerFETTM MOSFET ISOPLUS220

HiPerFET™ MOSFET ISOPLUS220™ Electrically Isolated Back Surface Features ● Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation ● Low drain to tab capacitance(

HiPerFET Power MOSFETs

VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammabilit

HiPerFET Power MOSFETs

VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Features International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammabilit

SIPMOS Power-Transistor

Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated

55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET

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